公开(公告)号：US20240402258A1

公开(公告)日：2024-12-05

申请号：US18328490

申请日：2023-06-02

Applicant: Intel Corporation

Inventor： A Ezekiel Poulose ,  Avinash Manu Aravindan ,  Naoki Matsumura ,  Jagadish Vasudeva Singh

IPC: G01R31/392 ,  G01R31/389 ,  H01M10/48 ,  H02J7/00

Abstract: Systems, apparatus, articles of manufacture, and methods are disclosed to manage battery outgassing conditions. An example apparatus includes an enclosure having a first conductive surface located proximate to an outer boundary of the enclosure, a second conductive surface located a first distance from the first conductive surface, a capacitance circuit coupled to the first conductive surface and the second conductive surface, and a charge control circuit to control an input signal to the second conductive surface and a third conductive surface based on an output of the capacitance circuit.

公开(公告)号：US20250097634A1

公开(公告)日：2025-03-20

申请号：US18467408

申请日：2023-09-14

Applicant: Intel Corporation

Inventor： Avinash Manu Aravindan ,  Sumod Cherukkate ,  Prakash Kurma Raju ,  Ezekiel Poulose

IPC: H04R1/28 ,  H04R1/02 ,  H04R7/04 ,  H04R7/18 ,  H04R31/00

Abstract: Methods and apparatus to improve bass response of speakers in portable devices are disclosed. An example speaker includes a speaker box having a front face and a back face, a distance between the front face and the back face being less than 1 inch. The speaker box has a first portion of a back volume and a second portion of the back volume, the first portion of the back volume defined between the back face and a first region of the front face, the second portion of the back volume defined between the back face a second region of the front face. The example speaker further includes an active speaker driver including a first diaphragm, the first diaphragm coupled to the first region of the front face. The example speaker also includes a second diaphragm coupled to the second region of the front face, the second diaphragm being passive.

公开(公告)号：US20240098938A1

公开(公告)日：2024-03-21

申请号：US18526948

申请日：2023-12-01

Applicant: Intel Corporation

Inventor： Ravishankar Srikanth ,  Vijith Halestoph R ,  Prakash Kurma Raju ,  Arnab Sen ,  Isha Garg ,  Ezekiel Poulose ,  Avinash Manu Aravindan

IPC: H05K7/20

CPC classification number: H05K7/20336 ,  H05K7/20154 ,  H05K7/2039

Abstract: Techniques for a vapor chamber with less dead space are disclosed. In an illustrative embodiment, a vapor chamber is formed by folding a sheet and sealing the edges. The edges seal the vapor chamber but take up a relatively large amount of space without allowing for vapor to be transported in that space. The folded edge takes up less space, reducing the overall footprint of the vapor chamber. The vapor chamber with a smaller footprint can allow for, e.g., more space for motherboard area, more space for a battery, and/or a smaller form factor overall.