公开(公告)号：US12191161B2

公开(公告)日：2025-01-07

申请号：US17132282

申请日：2020-12-23

Applicant: Intel Corporation

Inventor： Oladeji Fadayomi ,  Jeremy Ecton ,  Oscar Ojeda

IPC: H01L23/49 ,  H01L21/48 ,  H01L23/498

Abstract: An integrated circuit device, comprising a substrate comprising a dielectric material and a conductor on or within the dielectric material of the substrate. The conductor comprises a first portion comprising a first sloped sidewall, wherein a first base width of the first portion is greater than a first top width of the first portion. The conductor also comprises a second portion over the first portion, the second portion comprising a second sloped sidewall, wherein a second base width of the upper portion is greater than both a second top width of the second portion and the first top width of the first portion.

公开(公告)号：US20240101413A1

公开(公告)日：2024-03-28

申请号：US17954522

申请日：2022-09-28

Applicant: Intel Corporation

Inventor： Jeremy D. Ecton ,  Brandon C. Marin ,  Srinivas Venkata Ramanuja Pietambaram ,  Oladeji Fadayomi ,  Oscar Ojeda

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0006 ,  B81C1/00095 ,  B81C1/00523 ,  B81C1/00611 ,  B81B2207/07 ,  B81C2201/0123

Abstract: Disclosed herein are microelectronics package architectures having self-aligned air gaps and methods of manufacturing the same. The microelectronics packages may include first and second substrates, first and second traces, and a photosensitive material. The first trace may be attached to the first substrate and comprise a first sidewall. The second trace may be attached to the first substrate and comprise a second sidewall. The second traced may be spaced a distance from the first trace with the second sidewall facing the first sidewall. First and second portions of the photosensitive material may be attached to the first and second sidewalls, respectively. The second substrate may be attached to the first and second traces. The first and second substrates and the first and second traces may form the air gap in between the first and second traces.

公开(公告)号：US20220199427A1

公开(公告)日：2022-06-23

申请号：US17132282

申请日：2020-12-23

Applicant: Intel Corporation

Inventor： Oladeji Fadayomi ,  Jeremy Ecton ,  Oscar Ojeda

IPC: H01L21/48 ,  H01L23/498

Abstract: An integrated circuit device, comprising a substrate comprising a dielectric material and a conductor on or within the dielectric material of the substrate. The conductor comprises a first portion comprising a first sloped sidewall, wherein a first base width of the first portion is greater than a first top width of the first portion. The conductor also comprises a second portion over the first portion, the second portion comprising a second sloped sidewall, wherein a second base width of the upper portion is greater than both a second top width of the second portion and the first top width of the first portion.