公开(公告)号：CN106276780A

公开(公告)日：2017-01-04

申请号：CN201610481536.9

申请日：2016-06-27

Applicant: 罗伯特·博世有限公司

Inventor： U·汉森 ,  S·舒勒·瓦特金斯

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  G01D11/00

CPC classification number: G01D11/00 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81C1/00309 ,  B81C2201/0123 ,  B81C1/00182 ,  B81B3/0021 ,  B81B7/02

Abstract: 根据本发明涉及一种用于制造微机械元件的方法以及用此方法制造的微机械元件。所述微机械元件具有传感器衬底和安装在传感器衬底上的罩。为了制造该罩，在罩衬底的正面的表面上在一个被限制的区域设置多个开口，例如呈微孔的形式(直径几微米)。在制造这些开口时应注意，开口在罩衬底内终止，即不完全穿过罩衬底并具有较小的深度。然后将如此加工的罩衬底安装在传感器衬底上，其中，带有多个开口的罩衬底正面朝向传感器衬底。然后将罩衬底的一部分从背面去除，例如通过从背面减薄、磨削工艺或者其他适合于此的半导体工艺。通过从背面去除罩衬底材料来产生通向所述开口的进入口。

公开(公告)号：CN104364331A

公开(公告)日：2015-02-18

申请号：CN201380026727.0

申请日：2013-05-21

Applicant: 巴斯夫欧洲公司

Inventor： Y·李 ,  B·M·诺勒 ,  C·吉洛特 ,  D·弗朗茨

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/306

CPC classification number: C09G1/02 ,  B81C2201/0121 ,  B81C2201/0123 ,  B81C2201/0126 ,  H01L21/02024 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/461

Abstract: 本发明涉及一种制造半导体装置的方法，其包括在化学机械抛光组合物(Q1)存在下对含至少一种III-V族材料的基材或层进行化学机械抛光，该组合物(Q1)包含：(A)无机颗粒、有机颗粒、或其混合物或复合物，(B)至少一种两性非离子表面活性剂，其具有(b1)至少一个疏水性基团；及(b2)至少一个选自聚氧化烯基团的亲水性基团，所述聚氧化烯基团包含(b22)除氧化乙烯单体单元以外的氧化烯单体单元；及(M)水性介质。

公开(公告)号：US20230382722A1

公开(公告)日：2023-11-30

申请号：US18366201

申请日：2023-08-07

Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

Inventor： Frank SENGER ,  Shanshan GU-STOPPEL ,  Erdem YARAR ,  Gunnar WILLE

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00317 ,  B81B7/0041 ,  B81C2203/0118 ,  B81C2201/0123 ,  B81B2201/032 ,  B81B2201/042 ,  B81B2203/0163

Abstract: A method for encapsulating an MEMS structure in a stack structure includes providing a functional wafer structure including at least partly the MEMS structure. The method includes arranging the functional wafer structure and a glass wafer in the stack structure and along a stacking direction and is performed such that a cavity, in which at least part of the MEMS structure is arranged, is closed on one side along the stacking direction by the glass wafer and such that a spacing structure is arranged between the part of the MEMS structure and the glass wafer in the stack structure to provide a spacing between the part of the MEMS structure and the glass wafer along the stacking direction, such that the spacing structure encloses part of the cavity.

公开(公告)号：US20170267517A1

公开(公告)日：2017-09-21

申请号：US15250519

申请日：2016-08-29

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akira FUJIMOTO ,  Naofumi NAKAMURA ,  Tamio IKEHASHI

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0075 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00293 ,  B81C1/00674 ,  B81C2201/0123 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: According to one embodiment, an electronic device includes a base region, an element portion located on the base region, the element portion including a movable portion, and a protective film overlying the element portion and forming a cavity on an inner side of the protective film. The protective film includes a first protective layer and a second protective layer located on the first protective layer. A hole extends in a direction parallel to a main surface of the base region, and the second protective layer covers the hole.

公开(公告)号：EP2852644A1

公开(公告)日：2015-04-01

申请号：EP13794728.9

申请日：2013-05-21

Applicant: BASF SE

Inventor： NOLLER, Bastian Marten ,  GILLOT, Christophe ,  FRANZ, Diana ,  LI, Yuzhuo

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/306

CPC classification number: C09G1/02 ,  B81C2201/0121 ,  B81C2201/0123 ,  B81C2201/0126 ,  H01L21/02024 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/461

Abstract: A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one lll-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.

公开(公告)号：EP2852644A4

公开(公告)日：2016-04-06

申请号：EP13794728

申请日：2013-05-21

Applicant: BASF SE

Inventor： NOLLER BASTIAN MARTEN ,  GILLOT CHRISTOPHE ,  FRANZ DIANA ,  LI YUZHUO

IPC: H01L21/306 ,  C09G1/02

CPC classification number: C09G1/02 ,  B81C2201/0121 ,  B81C2201/0123 ,  B81C2201/0126 ,  H01L21/02024 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/461

公开(公告)号：WO2016053745A1

公开(公告)日：2016-04-07

申请号：PCT/US2015/051923

申请日：2015-09-24

Applicant: INVENSENSE, INC.

Inventor： TSAI, Julius Ming-Lin ,  DANEMAN, Michael

IPC: H04R17/02 ,  H04R31/00

CPC classification number: B81B7/02 ,  B81B2201/0257 ,  B81B2203/04 ,  B81B2207/015 ,  B81B2207/07 ,  B81B2207/094 ,  B81C1/00246 ,  B81C2201/0123 ,  B81C2201/013 ,  B81C2201/0183 ,  B81C2203/0714 ,  B81C2203/075 ,  H01L2224/48091 ,  H01L2924/15151 ,  H04R17/02 ,  H04R31/006 ,  H04R2201/003 ,  H01L2924/00014

Abstract: A piezoelectric microphone and/or a piezoelectric microphone system is presented herein. In an implementation, a piezoelectric microphone includes a microelectromechanical systems (MEMS) layer and a complementary metal-oxide-semiconductor (CMOS) layer. The MEMS layer includes at least one piezoelectric layer and a conductive layer. The conductive layer is deposited on the at least one piezoelectric layer and is associated with at least one sensing electrode. The CMOS layer is deposited on the MEMS layer. Furthermore, a cavity formed in the CMOS layer includes the at least one sensing electrode

Abstract translation: 此处呈现压电麦克风和/或压电麦克风系统。 在一个实现中，压电麦克风包括微机电系统（MEMS）层和互补金属氧化物半导体（CMOS）层。 MEMS层包括至少一个压电层和导电层。 导电层沉积在至少一个压电层上并且与至少一个感测电极相关联。 CMOS层沉积在MEMS层上。 此外，形成在CMOS层中的空腔包括至少一个感测电极

公开(公告)号：WO2013175396A1

公开(公告)日：2013-11-28

申请号：PCT/IB2013/054169

申请日：2013-05-21

Applicant: BASF SE ,  BASF SCHWEIZ AG ,  BASF (CHINA) COMPANY LIMITED

Inventor： NOLLER, Bastian Marten ,  GILLOT, Christophe ,  FRANZ, Diana

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/306

CPC classification number: C09G1/02 ,  B81C2201/0121 ,  B81C2201/0123 ,  B81C2201/0126 ,  H01L21/02024 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/461

Abstract: A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one lll-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.

Abstract translation: 一种用于制造半导体器件的方法，包括在化学机械抛光组合物（Q1）的存在下对包含至少一种III-V材料的基底或层进行化学机械抛光，所述化学机械抛光组合物包含（A）无机颗粒，有机颗粒， 或其混合物或复合物，（B）至少一种具有（b1）至少一个疏水基团的两亲性非离子表面活性剂; 和（b2）至少一种选自包含（b22）氧化烯单体单元以外的氧化烯单体单元的聚氧化烯基的亲水基团; 和（M）水性介质。

公开(公告)号：US20240253976A1

公开(公告)日：2024-08-01

申请号：US18417792

申请日：2024-01-19

Applicant: Infineon technologies AG

Inventor： Hutomo Suryo Wasisto ,  Sebastian Anzinger ,  Fabian Streb

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0029 ,  B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2207/11 ,  B81C2201/0108 ,  B81C2201/0123 ,  B81C2201/0143

Abstract: In accordance with an embodiment a microelectromechanical system (MEMS) device including a substrate comprising a vertically extending through hole and a horizontally extending membrane structure covering the through hole, where the membrane structure comprises a plurality of upright nanostructures for providing a liquid repellent membrane surface. In other embodiments, certain methods are used for fabricating MEMS devices.

公开(公告)号：US20180257932A1

公开(公告)日：2018-09-13

申请号：US15914092

申请日：2018-03-07

Applicant: Robert Bosch GmbH

Inventor： Benjamin Steuer ,  Christoph Schelling ,  Daniel Pantel ,  Stefan Pinter

IPC: B81C1/00 ,  G02B26/08

CPC classification number: B81C1/00626 ,  B81B7/0067 ,  B81B2201/042 ,  B81C2201/0123 ,  B81C2201/0133 ,  B81C2201/016 ,  B81C2201/053 ,  G02B26/0833

Abstract: A method for manufacturing a micromechanical device includes providing a silicon substrate having a front side and a rear side, where a first normal of the front side deviates by a first angle from the direction of the silicon substrate; forming in the front side first and second trenches that are spaced apart from and essentially parallel to each other, with the first and second trenches extending along a direction of the deviation; forming on the front side a first etching mask that covers the front side except for a first opening area between the first and second trenches; and anisotropically etching the front side using the etching mask, thereby forming in the opening area an oblique surface having a second angle to the first normal, which approximately corresponds to the first angle.