Abstract:
In an embodiment, a processor includes at least one execution unit to execute instructions, and an interrupt generation unit. The interrupt generation unit may be to: receive a plurality of values indicating thermal status values for a memory unit at multiple points in time across a first time window; determine a running average value based on the plurality of values indicating thermal status values in the memory unit; and in response to a determination that the running average value has exceeded a high thermal status threshold value, generate a thermal interrupt indicating a high thermal status event in the processor. Other embodiments are described and claimed.
Abstract:
In an embodiment, a processor includes at least one execution unit to execute instructions, and an interrupt generation unit. The interrupt generation unit may be to: receive a plurality of values indicating thermal status values for a memory unit at multiple points in time across a first time window; determine a running average value based on the plurality of values indicating thermal status values in the memory unit; and in response to a determination that the running average value has exceeded a high thermal status threshold value, generate a thermal interrupt indicating a high thermal status event in the processor. Other embodiments are described and claimed.
Abstract:
One embodiment of an apparatus includes a semiconductor chip having a processor and an on-die non-volatile storage resource. The on-die non-volatile storage may store different, appropriate performance related information for different configurations and usage cases of the processor for a same performance state of the processor.
Abstract:
Power gating control architectures. A memory device having at least a memory array and input/output (I/O) lines terminated on the memory device with termination circuitry coupled to receive a termination supply voltage (Vtt) with power gating circuitry to selectively gate the termination supply voltage in response to a power gating control signal (VttControl) is coupled with a processing core coupled with the memory device, the processing core to selectively assert and deassert the VttControl signal.
Abstract:
In an embodiment, a processor includes a first power rail, a first component coupled to the first power rail, and a compensation control unit. The compensation control unit is to: detect a request to change a voltage level of the first power rail by a first voltage change amount; in response to detecting the request, determine that the first voltage change amount exceeds a first threshold level associated with the first component; and in response to determining that the first voltage change amount exceeds the first threshold level, initiate a first compensation action prior to changing the voltage level of the first power rail. Other embodiments are described and claimed.
Abstract:
Methods, systems, and apparatuses relating to package on package memory refresh and self-refresh rate management are described. In one embodiment, an apparatus includes a processor die, a dynamic memory die mounted to and overlapping the processor die, a first thermal sensor of the processor die disposed adjacent to a first hot spot from a first type of workload and a second thermal sensor of the processor die disposed adjacent to a second hot spot from a second type of workload, and a hardware control circuit of the processor die to cause a refresh of a capacitor of the dynamic memory die when either of an output of the first thermal sensor exceeds a first threshold value and an output of the second thermal sensor exceeds a second threshold value.
Abstract:
One embodiment of an apparatus includes a semiconductor chip having a processor and an on-die non-volatile storage resource. The on-die non-volatile storage may store different, appropriate performance related information for different configurations and usage cases of the processor for a same performance state of the processor.
Abstract:
In an embodiment, a processor includes a first domain with at least one core to execute instructions and a second domain coupled to the first domain and including at least one non-core circuit. These domains can operate at independent frequencies, and a power control unit coupled to the domains may include a thermal logic to cause a reduction in a frequency of the first domain responsive to occurrence of a thermal event in the second domain. Other embodiments are described and claimed.