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公开(公告)号:US20250006645A1
公开(公告)日:2025-01-02
申请号:US18343892
申请日:2023-06-29
Applicant: Intel Corporation
Inventor: Xiao Liu , Bohan Shan , Dingying Xu , Gang Duan , Haobo Chen , Hongxia Feng , Jung Kyu Han , Xiaoying Guo , Zhixin Xie , Xiyu Hu , Robert Alan May , Kristof Kuwawi Darmawikarta , Changhua Liu , Yosuke Kanaoka
Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first layer of a substrate including a first material having a cavity and a conductive pad at a bottom of the cavity; a first microelectronic component having a first surface and an opposing second surface, the first microelectronic component in the cavity and electrically coupled to the conductive pad at the bottom of the cavity; a second layer of the substrate on the first layer of the substrate, the second layer including a second material that extends into the cavity and on and around the first microelectronic component, wherein the second material includes an organic photoimageable dielectric (PID) or an organic non-photoimageable dielectric (non-PID); and a second microelectronic component electrically coupled to the second surface of the first microelectronic component by conductive pathways through the second layer of the substrate.
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2.
公开(公告)号:US20250112138A1
公开(公告)日:2025-04-03
申请号:US18374592
申请日:2023-09-28
Applicant: Intel Corporation
Inventor: Srinivas Pietambaram , Gang Duan , Sameer Paital , Zhixin Xie , Rahul Manepalli , Jieying Kong
IPC: H01L23/498 , H01L21/48 , H01L23/00 , H01L23/15
Abstract: Microelectronic integrated circuit package structures include an apparatus having a substrate comprising a layer of glass, the substrate comprising one or more through glass vias (TGVs) extending through the layer of glass. Individual TGVs comprise a TGV sidewall, an organic dielectric layer on the TGV sidewall and a conductive layer on the organic dielectric layer.
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