公开(公告)号：US20220234883A1

公开(公告)日：2022-07-28

申请号：US17559435

申请日：2021-12-22

Applicant: InvenSense, Inc.

Inventor： Edoardo Belloni ,  Luca Coronato ,  Giacomo Gafforelli

IPC: B81B3/00

Abstract: A microelectromechanical system (MEMS) test structure includes a plurality of capacitors formed from sense electrodes and capacitive plates having a predetermined geometry and size associated with a related MEMS device such as a MEMS sensor. Based on the predetermined relationships between the capacitors of the test structure, and between the test structure and the MEMS devices, an effect of fringing fields on the sensed capacitances of the MEMS devices may be eliminated, and the capacitive gap of the MEMS device may be accurately measured.

公开(公告)号：US20240183877A1

公开(公告)日：2024-06-06

申请号：US18495096

申请日：2023-10-26

Applicant: InvenSense, Inc.

Inventor： Adolfo Giambastiani ,  Luca Coronato ,  Edoardo Belloni ,  Stefano Dellea ,  Yaoching Wang ,  Giacomo Gafforelli

IPC: G01P15/12 ,  G01P1/00 ,  G01P15/18 ,  G01P21/00

CPC classification number: G01P15/12 ,  G01P1/00 ,  G01P15/18 ,  G01P21/00

Abstract: A MEMS accelerometer package includes multiple cavities such that a change in pressure corresponding to a breach in one or more of the cavities is readily identified based on the output of a pressure-sensitive sensor such as a MEMS resonator. One or more mitigations may be initiated in response to the identification of the change in pressure.

公开(公告)号：US12017907B2

公开(公告)日：2024-06-25

申请号：US17559435

申请日：2021-12-22

Applicant: InvenSense, Inc.

Inventor： Edoardo Belloni ,  Luca Coronato ,  Giacomo Gafforelli

IPC: B81B3/00

CPC classification number: B81B3/0018 ,  B81B2201/0292 ,  B81B2203/04

Abstract: A microelectromechanical system (MEMS) test structure includes a plurality of capacitors formed from sense electrodes and capacitive plates having a predetermined geometry and size associated with a related MEMS device such as a MEMS sensor. Based on the predetermined relationships between the capacitors of the test structure, and between the test structure and the MEMS devices, an effect of fringing fields on the sensed capacitances of the MEMS devices may be eliminated, and the capacitive gap of the MEMS device may be accurately measured.