公开(公告)号：US12139398B2

公开(公告)日：2024-11-12

申请号：US17950007

申请日：2022-09-21

Applicant: InvenSense, Inc.

Inventor： Weng Shen Su ,  CHung-Hsien Lin ,  Yaoching Wang ,  Tsung Lin Tang ,  Ting-Yuan Liu ,  Calin Miclaus

IPC: B81B3/00 ,  B81C1/00 ,  G01L9/00

Abstract: A method includes depositing a passivation layer on a substrate; depositing and patterning a first polysilicon layer on the passivation layer; depositing and patterning a first oxide layer on the first polysilicon layer forming a patterned first oxide layer; depositing and patterning a second polysilicon layer on the patterned first oxide layer. A portion of the second polysilicon layer directly contacts a portion of the first polysilicon layer. A portion of the patterned second polysilicon layer corresponds to a bottom electrode. A second oxide layer is deposited on the patterned second polysilicon layer and on an exposed portion of the patterned first oxide layer. A portion of the second oxide layer corresponding to a sensing cavity is etched, exposing the bottom electrode. Another substrate is bonded to the second oxide layer enclosing the sensing cavity. A top electrode is disposed within the another substrate and positioned over the bottom electrode.

公开(公告)号：US20240183877A1

公开(公告)日：2024-06-06

申请号：US18495096

申请日：2023-10-26

Applicant: InvenSense, Inc.

Inventor： Adolfo Giambastiani ,  Luca Coronato ,  Edoardo Belloni ,  Stefano Dellea ,  Yaoching Wang ,  Giacomo Gafforelli

IPC: G01P15/12 ,  G01P1/00 ,  G01P15/18 ,  G01P21/00

CPC classification number: G01P15/12 ,  G01P1/00 ,  G01P15/18 ,  G01P21/00

Abstract: A MEMS accelerometer package includes multiple cavities such that a change in pressure corresponding to a breach in one or more of the cavities is readily identified based on the output of a pressure-sensitive sensor such as a MEMS resonator. One or more mitigations may be initiated in response to the identification of the change in pressure.

公开(公告)号：US20230296461A1

公开(公告)日：2023-09-21

申请号：US18113541

申请日：2023-02-23

Applicant: InvenSense, Inc.

Inventor： Yoshitaka Sasaki ,  Jotaro Akiyama ,  Sal Akram ,  Yaoching Wang ,  Weng Shen Su ,  Tsung Lin Tang ,  Ting-Yuan Liu ,  Yuki Shibano ,  Chung-Hsien Lin

IPC: G01L9/12 ,  B81C1/00

CPC classification number: G01L9/12 ,  B81C1/00198 ,  B81C2201/0132

Abstract: A pressure sensor includes a first electrode, a plurality of cavities, and a second electrode. The second electrode is disposed opposite the first electrode through the plurality of cavities. The second electrode includes a flat structure spanning two adjacent cavities of the plurality of cavities.

公开(公告)号：US20230089813A1

公开(公告)日：2023-03-23

申请号：US17950007

申请日：2022-09-21

Applicant: InvenSense, Inc.

Inventor： Weng Shen Su ,  Chung-Hsien Lin ,  Yaoching Wang ,  Tsung Lin Tang ,  Ting-Yuan Liu ,  Calin Miclaus

IPC: B81C1/00 ,  G01L9/00 ,  B81B3/00

Abstract: A method includes depositing a passivation layer on a substrate; depositing and patterning a first polysilicon layer on the passivation layer; depositing and patterning a first oxide layer on the first polysilicon layer forming a patterned first oxide layer; depositing and patterning a second polysilicon layer on the patterned first oxide layer. A portion of the second polysilicon layer directly contacts a portion of the first polysilicon layer. A portion of the patterned second polysilicon layer corresponds to a bottom electrode. A second oxide layer is deposited on the patterned second polysilicon layer and on an exposed portion of the patterned first oxide layer. A portion of the second oxide layer corresponding to a sensing cavity is etched, exposing the bottom electrode. Another substrate is bonded to the second oxide layer enclosing the sensing cavity. A top electrode is disposed within the another substrate and positioned over the bottom electrode.

公开(公告)号：US12140489B2

公开(公告)日：2024-11-12

申请号：US17899395

申请日：2022-08-30

Applicant: InvenSense, Inc.

Inventor： Tsung Lin Tang ,  Chung-Hsien Lin ,  Ting-Yuan Liu ,  Weng Shen Su ,  Yaoching Wang

IPC: G01L9/12 ,  G01L9/00

Abstract: A pressure sensor comprises a polysilicon sensing membrane. The pressure sensor further includes one or more polysilicon electrodes disposed over a silicon substrate. The sensor also includes one or more polysilicon routing layers that electrically connects electrodes of the one or more polysilicon electrodes to one another, wherein the polysilicon sensing membrane deforms responsive to a stimuli and changes a capacitance between the polysilicon sensing membrane and the one or more polysilicon electrodes. The sensor also includes one or more vacuum cavities positioned between the polysilicon sensing membrane and the one or more polysilicon electrodes.

公开(公告)号：US20230088319A1

公开(公告)日：2023-03-23

申请号：US17899395

申请日：2022-08-30

Applicant: InvenSense, Inc.

Inventor： Tsung Lin Tang ,  Chung-Hsien Lin ,  Ting-Yuan Liu ,  Weng Shen Su ,  Yaoching Wang

IPC: G01L9/00 ,  G01L9/12

Abstract: A pressure sensor comprises a polysilicon sensing membrane. The pressure sensor further includes one or more polysilicon electrodes disposed over a silicon substrate. The sensor also includes one or more polysilicon routing layers that electrically connects electrodes of the one or more polysilicon electrodes to one another, wherein the polysilicon sensing membrane deforms responsive to a stimuli and changes a capacitance between the polysilicon sensing membrane and the one or more polysilicon electrodes. The sensor also includes one or more vacuum cavities positioned between the polysilicon sensing membrane and the one or more polysilicon electrodes.