公开(公告)号：US09595488B2

公开(公告)日：2017-03-14

申请号：US15010988

申请日：2016-01-29

Applicant: J-DEVICES CORPORATION

Inventor： Yoshihiro Tanaka

IPC: H01L23/52 ,  H01L29/40 ,  H01L23/48 ,  H01L23/495 ,  H01L23/498 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L23/49513 ,  H01L23/49582 ,  H01L23/49861 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/26175 ,  H01L2224/29011 ,  H01L2224/29014 ,  H01L2224/29015 ,  H01L2224/29078 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83192 ,  H01L2224/83385 ,  H01L2224/83439 ,  H01L2224/83815 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2924/00

Abstract: A semiconductor device according to one embodiment of the present invention includes a semiconductor element, an island having a surface on which the semiconductor element is fixed using a first metal, and a first pattern formed by a second metal, the first pattern being arranged on one part of the surface, wherein the second metal has a greater wetting characteristic than the surface when the first metal is melted.

Abstract translation: 根据本发明的一个实施例的半导体器件包括半导体元件，具有使用第一金属固定半导体元件的表面的岛和由第二金属形成的第一图案，第一图案被布置在一个上 表面的一部分，其中当第一金属熔化时，第二金属具有比表面更大的润湿特性。