公开(公告)号：US10109710B2

公开(公告)日：2018-10-23

申请号：US15523603

申请日：2015-11-02

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Choong-hyun Lee ,  Tomonori Nishimura

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/167 ,  H01L29/10 ,  H01L21/223 ,  H01L29/04 ,  H01L29/78

Abstract: A semiconductor device having a channel region that is formed in a germanium layer and has a first conductive type, and a source region and a drain region that are formed in the germanium layer and have a second conductive type different from the first conductive type, wherein an oxygen concentration in the channel region is less than an oxygen concentration in a junction interface between at least one of the source region and the drain region and a region that surrounds the at least one of the source region and the drain region and has the first conductive type.

公开(公告)号：US20150228492A1

公开(公告)日：2015-08-13

申请号：US14423627

申请日：2013-04-18

Applicant: Japan Science and Technology Agency

Inventor： Akira Toriumi ,  Choong-hyun Lee

IPC: H01L21/28 ,  H01L29/51 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L21/28255 ,  H01L21/02112 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02236 ,  H01L21/02255 ,  H01L29/16 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

Abstract: A semiconductor structure includes: a germanium layer 30; and an insulating film that has a film 32 that includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide film 34 that is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide, wherein: an EOT of the insulating film is 2 nm or less; and on a presumption that an Au acting as a metal film is formed on the insulating film, a leak current density is 10−5×EOT+4 A/cm2 or less in a case where a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 V.

Abstract translation: 半导体结构包括：锗层30; 以及绝缘膜，其具有包含氧化锗并形成在锗层上的膜32和形成在包含氧化锗并且介电常数高于氧化硅的介电常数的高介电氧化物膜34上的高电介质氧化膜34 其中：所述绝缘膜的EOT为2nm以下; 并且假设在绝缘膜上形成作为金属膜的金属，在金属膜相对于金属膜的电压的情况下，漏电流密度为10-5×EOT + 4A / cm 2以下 锗层从平坦带电压施加到积聚区域侧1V。

公开(公告)号：US09691620B2

公开(公告)日：2017-06-27

申请号：US14423627

申请日：2013-04-18

Applicant: Japan Science and Technology Agency

Inventor： Akira Toriumi ,  Choong-hyun Lee

IPC: H01L21/02 ,  H01L23/58 ,  H01L21/31 ,  H01L21/28 ,  H01L29/78 ,  H01L29/51 ,  H01L29/16

CPC classification number: H01L21/28255 ,  H01L21/02112 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02236 ,  H01L21/02255 ,  H01L29/16 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

Abstract: A semiconductor structure includes: a germanium layer 30; and an insulating film that has a film 32 that includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide film 34 that is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide, wherein: an EOT of the insulating film is 2 nm or less; and on a presumption that an Au acting as a metal film is formed on the insulating film, a leak current density is 10−5×EOT+4 A/cm2 or less in a case where a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 V.

公开(公告)号：US09647074B2

公开(公告)日：2017-05-09

申请号：US15031437

申请日：2014-10-10

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Choong-hyun Lee ,  Tomonori Nishimura

IPC: H01L29/36 ,  H01L21/28 ,  H01L21/322 ,  H01L21/324 ,  H01L29/16 ,  H01L29/78 ,  H01L29/51

CPC classification number: H01L29/36 ,  H01L21/28255 ,  H01L21/322 ,  H01L21/324 ,  H01L21/3247 ,  H01L29/16 ,  H01L29/517 ,  H01L29/78

Abstract: A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm−3 or greater in a reducing gas atmosphere at 700° C. or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layer 30 having an oxygen concentration of 1×1016 cm−3 or greater in a reducing gas atmosphere so that the oxygen concentration decreases.