公开(公告)号：US10748776B2

公开(公告)日：2020-08-18

申请号：US16326521

申请日：2017-02-23

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Tomonori Nishimura

IPC: H01L21/285 ,  H01L29/78 ,  H01L29/45 ,  H01L21/28 ,  H01L29/16 ,  H01L29/417 ,  H01L29/872

Abstract: In the present invention, a contact layer formed of a material having an electron concentration of less than 1×1022 cm−3 is directly provided on a surface of a semiconductor crystal having an n-type conductivity with a band gap of 1.2 eV or less at room temperature. Consequently, the wave function penetration from the contact layer side to the semiconductor surface side is reduced. As a result, the formation of the energy barrier height·ϕB due to the Fermi level pinning phenomenon is much suppressed. It is possible to achieve the contact with a lower resistivity and with high ohmic properties.

公开(公告)号：US20190228978A1

公开(公告)日：2019-07-25

申请号：US16326521

申请日：2017-02-23

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Tomonori Nishimura

IPC: H01L21/285 ,  H01L29/417 ,  H01L29/78 ,  H01L29/872

Abstract: In the present invention, a contact layer formed of a material having an electron concentration of less than 1×1022 cm−3 is directly provided on a surface of a semiconductor crystal having an n-type conductivity with a band gap of 1.2 eV or less at room temperature. Consequently, the wave function penetration from the contact layer side to the semiconductor surface side is reduced. As a result, the formation of the energy barrier height·ϕB due to the Fermi level pinning phenomenon is much suppressed. It is possible to achieve the contact with a lower resistivity and with high ohmic properties.

公开(公告)号：US09647074B2

公开(公告)日：2017-05-09

申请号：US15031437

申请日：2014-10-10

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Choong-hyun Lee ,  Tomonori Nishimura

IPC: H01L29/36 ,  H01L21/28 ,  H01L21/322 ,  H01L21/324 ,  H01L29/16 ,  H01L29/78 ,  H01L29/51

CPC classification number: H01L29/36 ,  H01L21/28255 ,  H01L21/322 ,  H01L21/324 ,  H01L21/3247 ,  H01L29/16 ,  H01L29/517 ,  H01L29/78

Abstract: A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm−3 or greater in a reducing gas atmosphere at 700° C. or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layer 30 having an oxygen concentration of 1×1016 cm−3 or greater in a reducing gas atmosphere so that the oxygen concentration decreases.

公开(公告)号：US10109710B2

公开(公告)日：2018-10-23

申请号：US15523603

申请日：2015-11-02

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Choong-hyun Lee ,  Tomonori Nishimura

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/167 ,  H01L29/10 ,  H01L21/223 ,  H01L29/04 ,  H01L29/78

Abstract: A semiconductor device having a channel region that is formed in a germanium layer and has a first conductive type, and a source region and a drain region that are formed in the germanium layer and have a second conductive type different from the first conductive type, wherein an oxygen concentration in the channel region is less than an oxygen concentration in a junction interface between at least one of the source region and the drain region and a region that surrounds the at least one of the source region and the drain region and has the first conductive type.

公开(公告)号：US09722026B2

公开(公告)日：2017-08-01

申请号：US14914310

申请日：2014-06-06

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Toshiyuki Tabata ,  Choong Hyun Lee ,  Tomonori Nishimura ,  Cimang Lu

IPC: H01L21/16 ,  H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  C23C14/08 ,  C23C14/35

CPC classification number: H01L29/16 ,  C23C14/083 ,  C23C14/086 ,  C23C14/352 ,  H01L21/02112 ,  H01L21/02266 ,  H01L21/28255 ,  H01L21/3247 ,  H01L29/517 ,  H01L29/66477 ,  H01L29/78

Abstract: A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 μm square area of the upper surface of the germanium layer is 0.7 nm or less.