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    PROCESS FOR FORMING AN AMORPHOUS CONDUCTIVE OXIDE FILM
    2.
    发明申请
    PROCESS FOR FORMING AN AMORPHOUS CONDUCTIVE OXIDE FILM 审中-公开
    形成非导电氧化膜的方法

    公开(公告)号：US20140367674A1

    公开(公告)日：2014-12-18

    申请号：US14344072

    申请日：2012-11-15

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Tatsuya Shimoda ,  Jinwang Li

    IPC: H01L21/02 ,  H01L29/24

    CPC classification number: H01L21/02565 ,  H01B1/08 ,  H01L21/02614 ,  H01L29/247 ,  H01L29/7869

    Abstract: A process for forming an amorphous conductive oxide film, comprising the steps of: applying a composition which comprises (A1) a×y parts by mole of at least one metal compound selected from the group consisting of carboxylate salts, alkoxides, diketonates, nitrate salts and halides of a metal selected from among lanthanoids (excluding cerium), (A2) a×(1−y) parts by mole of at least one metal compound selected from the group consisting of carboxylate salts, alkoxides, diketonates, nitrate salts and halides of a metal selected from among lead, bismuth, nickel, palladium, copper and silver, (B) 1 part by mole of at least one metal compound selected from the group consisting of carboxylate salts, alkoxides, diketonates, nitrate salts, halides, nitrosylcarboxylate salts, nitrosylnitrate salts, nitrosylsulfate salts and nitrosylhalides of a metal selected from among ruthenium, iridium, rhodium and cobalt, and (C) a solvent containing at least one selected from the group consisting of carboxylic acids, alcohols, ketones, diols and glycol ethers to a substrate to form a coating film; and heating the coating film in an oxidizing atmosphere.

    Abstract translation: 一种形成非晶导电氧化物膜的方法，包括以下步骤：施加一种组合物，其包含（A1）a×y份摩尔选自羧酸盐，醇盐，二酮盐，硝酸盐的至少一种金属化合物 和选自镧系元素（不包括铈）的金属的卤化物，（A2）a×（1-y）摩尔的至少一种选自羧酸盐，醇盐，二酮盐，硝酸盐和卤化物的金属化合物 选自铅，铋，镍，钯，铜和银的金属，（B）1份（摩尔）选自羧酸盐，醇盐，二酮化物，硝酸盐，卤化物，亚硝酰基羧酸盐中的至少一种金属化合物 选自钌，铱，铑和钴的金属的盐，亚硝基硝酸盐，亚硝酰基硫酸盐和亚硝酰卤，和（C）含有选自汽车 酚醛酸，醇，酮，二醇和二醇醚，形成一个涂膜; 并在氧化气氛中加热涂膜。

    Thin film transistor and method for manufacturing thin film transistor
    3.
    发明授权
    Thin film transistor and method for manufacturing thin film transistor 有权
    薄膜晶体管及制造薄膜晶体管的方法

    公开(公告)号：US09536993B2

    公开(公告)日：2017-01-03

    申请号：US14386811

    申请日：2013-03-18

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Tatsuya Shimoda ,  Satoshi Inoue ,  Tue Trong Phan ,  Takaaki Miyasako ,  Jinwang Li

    IPC: H01L29/10 ,  H01L29/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/49

    CPC classification number: H01L29/78696 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

    Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

    Abstract translation: 根据本发明的薄膜晶体管100包括栅电极20，沟道44和设置在栅电极20和沟道44之间并由氧化物（可能包含不可避免的杂质）的栅极绝缘层34;这适用于下文中的氧化物 ）含有镧和锆。 通道44由包含铟，锌和锆（Zr）的第一氧化物构成，原子比为0.015以上且0.075以下，铟相对于原子比为1，第二氧化物含有铟和锆 相对于原子比为1的铟（In）的原子比为0.055以上且0.16以下的原子比（Zr），或相对于原子比为0.055以上且0.16以下的含有铟和镧的第3氧化物 到In（In）的原子比为1。

    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
    5.
    发明申请
    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 有权
    薄膜晶体管和制造薄膜晶体管的方法

    公开(公告)号：US20150076487A1

    公开(公告)日：2015-03-19

    申请号：US14386811

    申请日：2013-03-18

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Tatsuya Shimoda ,  Satoshi Inoue ,  Tue Trong Phan ,  Takaaki Miyasako ,  Jinwang Li

    IPC: H01L29/66 ,  H01L29/786

    CPC classification number: H01L29/78696 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

    Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

    Abstract translation: 根据本发明的薄膜晶体管100包括栅电极20，沟道44和设置在栅电极20和沟道44之间并由氧化物（可能包含不可避免的杂质）的栅极绝缘层34;这适用于下文中的氧化物 ）含有镧和锆。 通道44由包含铟，锌和锆（Zr）的第一氧化物构成，原子比为0.015以上且0.075以下，铟相对于原子比为1，第二氧化物含有铟和锆 相对于原子比为1的铟（In）的原子比为0.055以上且0.16以下的原子比（Zr），或相对于原子比为0.055以上且0.16以下的含有铟和镧的第3氧化物 到In（In）的原子比为1。

    METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
    6.
    发明申请
    METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 审中-公开

    公开(公告)号：US20190386151A1

    公开(公告)日：2019-12-19

    申请号：US16550161

    申请日：2019-08-23

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Tatsuya SHIMODA ,  Satoshi INOUE ,  Tue Trong PHAN ,  Takaaki MIYASAKO ,  Jinwang Li

    IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49

    Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

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