公开(公告)号：US20150076487A1

公开(公告)日：2015-03-19

申请号：US14386811

申请日：2013-03-18

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Tatsuya Shimoda ,  Satoshi Inoue ,  Tue Trong Phan ,  Takaaki Miyasako ,  Jinwang Li

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/78696 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

Abstract translation: 根据本发明的薄膜晶体管100包括栅电极20，沟道44和设置在栅电极20和沟道44之间并由氧化物（可能包含不可避免的杂质）的栅极绝缘层34;这适用于下文中的氧化物 ）含有镧和锆。 通道44由包含铟，锌和锆（Zr）的第一氧化物构成，原子比为0.015以上且0.075以下，铟相对于原子比为1，第二氧化物含有铟和锆 相对于原子比为1的铟（In）的原子比为0.055以上且0.16以下的原子比（Zr），或相对于原子比为0.055以上且0.16以下的含有铟和镧的第3氧化物 到In（In）的原子比为1。

公开(公告)号：US09536993B2

公开(公告)日：2017-01-03

申请号：US14386811

申请日：2013-03-18

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Tatsuya Shimoda ,  Satoshi Inoue ,  Tue Trong Phan ,  Takaaki Miyasako ,  Jinwang Li

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/49

CPC classification number: H01L29/78696 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

Abstract translation: 根据本发明的薄膜晶体管100包括栅电极20，沟道44和设置在栅电极20和沟道44之间并由氧化物（可能包含不可避免的杂质）的栅极绝缘层34;这适用于下文中的氧化物 ）含有镧和锆。 通道44由包含铟，锌和锆（Zr）的第一氧化物构成，原子比为0.015以上且0.075以下，铟相对于原子比为1，第二氧化物含有铟和锆 相对于原子比为1的铟（In）的原子比为0.055以上且0.16以下的原子比（Zr），或相对于原子比为0.055以上且0.16以下的含有铟和镧的第3氧化物 到In（In）的原子比为1。