公开(公告)号：US09722026B2

公开(公告)日：2017-08-01

申请号：US14914310

申请日：2014-06-06

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Toshiyuki Tabata ,  Choong Hyun Lee ,  Tomonori Nishimura ,  Cimang Lu

IPC: H01L21/16 ,  H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  C23C14/08 ,  C23C14/35

CPC classification number: H01L29/16 ,  C23C14/083 ,  C23C14/086 ,  C23C14/352 ,  H01L21/02112 ,  H01L21/02266 ,  H01L21/28255 ,  H01L21/3247 ,  H01L29/517 ,  H01L29/66477 ,  H01L29/78

Abstract: A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 μm square area of the upper surface of the germanium layer is 0.7 nm or less.

公开(公告)号：US09306026B2

公开(公告)日：2016-04-05

申请号：US14630198

申请日：2015-02-24

Applicant: Japan Science and Technology Agency

Inventor： Akira Toriumi ,  Toshiyuki Tabata

IPC: H01L27/01 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/16 ,  H01L21/3105

CPC classification number: H01L29/517 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/28255 ,  H01L21/3105 ,  H01L29/16 ,  H01L29/512 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

Abstract: A semiconductor structure includes: a germanium layer 30; and an aluminum oxynitride film 32 that is formed on the germanium layer, wherein: an EOT of the aluminum oxynitride film is 2 nm or less; Cit/Cacc is 0.4 or less; on a presumption that Au acting as a metal film is formed on the aluminum oxynitride film, the Cit is a capacitance value between the germanium layer and the metal film at a frequency of 1 MHz in a case where a voltage of the metal film with respect to the germanium layer is applied to an inversion region side by 0.5 V; and the Cacc is a capacitance value between the germanium layer and the metal film in an accumulation region.

Abstract translation: 半导体结构包括：锗层30; 以及形成在锗层上的氧氮化铝膜32，其中：氮氧化铝膜的EOT为2nm以下; Cit / Cacc为0.4以下; 假设在氧氮化铝膜上形成作为金属膜的金属，则Cit为金属膜的电压相对于1MHz时的锗层与金属膜之间的电容值 到锗层被反向区域侧施加0.5V; 并且Cacc是在积聚区域中的锗层和金属膜之间的电容值。

公开(公告)号：US20150171185A1

公开(公告)日：2015-06-18

申请号：US14630198

申请日：2015-02-24

Applicant: Japan Science and Technology Agency

Inventor： Akira Toriumi ,  Toshiyuki Tabata

IPC: H01L29/51 ,  H01L29/16 ,  H01L21/3105 ,  H01L29/78

CPC classification number: H01L29/517 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/28255 ,  H01L21/3105 ,  H01L29/16 ,  H01L29/512 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

Abstract: A semiconductor structure includes: a germanium layer 30; and an aluminum oxynitride film 32 that is formed on the germanium layer, wherein: an EOT of the aluminum oxynitride film is 2 nm or less; Cit/Cacc is 0.4 or less; on a presumption that Au acting as a metal film is formed on the aluminum oxynitride film, the Cit is a capacitance value between the germanium layer and the metal film at a frequency of 1 MHz in a case where a voltage of the metal film with respect to the germanium layer is applied to an inversion region side by 0.5 V; and the Cacc is a capacitance value between the germanium layer and the metal film in an accumulation region.

Abstract translation: 半导体结构包括：锗层30; 以及形成在锗层上的氧氮化铝膜32，其中：氮氧化铝膜的EOT为2nm以下; Cit / Cacc为0.4以下; 假设在氧氮化铝膜上形成作为金属膜的金属，则Cit为金属膜的电压相对于1MHz时的锗层与金属膜之间的电容值 到锗层被反向区域侧施加0.5V; 并且Cacc是在积聚区域中的锗层和金属膜之间的电容值。