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公开(公告)号：US10073344B2
公开(公告)日：2018-09-11
申请号：US15095774
申请日：2016-04-11
Applicant: JSR CORPORATION
Inventor： Taiichi Furukawa , Sosuke Osawa
CPC classification number: G03F7/11 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/325
Abstract: Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom.
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公开(公告)号：US11687003B2
公开(公告)日：2023-06-27
申请号：US16104170
申请日：2018-08-17
Applicant: JSR CORPORATION
Inventor： Taiichi Furukawa , Sosuke Osawa
CPC classification number: G03F7/11 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/325
Abstract: Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom.
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公开(公告)号：US20210388197A1
公开(公告)日：2021-12-16
申请号：US17412518
申请日：2021-08-26
Applicant: JSR CORPORATION
Inventor： Tomohiko SAKURAI , Sosuke Osawa , Hiromitsu Nakashima
IPC: C08L41/00 , G03F7/11 , G03F7/38 , C08L101/04 , C08L101/08 , G03F7/039 , H01L21/027 , C08L101/06 , G03F7/20
Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.
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公开(公告)号：US11340528B2
公开(公告)日：2022-05-24
申请号：US16710277
申请日：2019-12-11
Applicant: JSR CORPORATION
Inventor： Sosuke Osawa , Kosuke Terayama , Hajime Inami , Kanako Ueda , Atsuto Nishii
Abstract: Disclosed herein is a method for producing a composition for resist top coat layer, the method including: polymerizing a monomer solution containing a fluorine-containing monomer in a presence of a polymerization initiator that cleaves to generate an active species having 7 or more carbon atoms in total to obtain a fluorine-containing resin A; and mixing the fluorine-containing resin A and a solvent.
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公开(公告)号：US20190249000A1
公开(公告)日：2019-08-15
申请号：US16395337
申请日：2019-04-26
Applicant: JSR Corporation
Inventor： Tomohiko SAKURAI , Sosuke Osawa , Hiromitsu Nakashima
IPC: C08L41/00 , G03F7/11 , G03F7/38 , G03F7/039 , C08L101/04 , C08L101/08
CPC classification number: C08L41/00 , C08L101/04 , C08L101/06 , C08L101/08 , G03F7/0045 , G03F7/039 , G03F7/11 , G03F7/38 , H01L21/027
Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.
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Patent Agency Ranking
公开(公告)号：US11603459B2
公开(公告)日：2023-03-14
申请号：US17412518
申请日：2021-08-26
Applicant: JSR CORPORATION
Inventor： Tomohiko Sakurai , Sosuke Osawa , Hiromitsu Nakashima
IPC: C08L41/00 , G03F7/11 , C08L101/04 , C08L101/08 , C08L101/06 , G03F7/20 , G03F7/38 , G03F7/039 , H01L21/027 , G03F7/004
Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.
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公开(公告)号：US20230027151A1
公开(公告)日：2023-01-26
申请号：US17847228
申请日：2022-06-23
Applicant: JSR CORPORATION
Inventor： Ryo KUMEGAWA , Sosuke Osawa , Miki Tamada , Ken Maruyama , Motohiro Shiratani
Abstract: A method for producing a film includes: coating a surface of a substrate with a composition containing a polymer having a structural unit represented by formula (1) and having a number average molecular weight of 13000 or more and a solvent, heating a coating film formed by the coating, and removing, with a rinsing liquid, a part of the coating film after the heating, wherein the rinsing liquid to be used contains a basic compound. In the formula (1), Y1 is a single bond, —CO—NR2—, a divalent aromatic ring group, a divalent group containing —O—, or a divalent group containing —CO—NR2—. A1 is a single bond, —O—, —S—, or —NR3—. R1 is a hydrogen atom, a monovalent hydrocarbon group, a monovalent halogenated hydrocarbon group, or a monovalent group having a heterocyclic structure.
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公开(公告)号：US11745216B2
公开(公告)日：2023-09-05
申请号：US17847228
申请日：2022-06-23
Applicant: JSR CORPORATION
Inventor： Ryo Kumegawa , Sosuke Osawa , Miki Tamada , Ken Maruyama , Motohiro Shiratani
IPC: B05D1/00 , B05D1/32 , C08J5/18 , C08F297/02
CPC classification number: B05D1/327 , C08J5/18 , B05D2401/10 , C08F297/023
Abstract: A method for producing a film includes: coating a surface of a substrate with a composition containing a polymer having a structural unit represented by formula (1) and having a number average molecular weight of 13000 or more and a solvent, heating a coating film formed by the coating, and removing, with a rinsing liquid, a part of the coating film after the heating, wherein the rinsing liquid to be used contains a basic compound. In the formula (1), Y1 is a single bond, —CO—NR2—, a divalent aromatic ring group, a divalent group containing —O—, or a divalent group containing —CO—NR2—. A1 is a single bond, —O—, —S—, or —NR3—. R1 is a hydrogen atom, a monovalent hydrocarbon group, a monovalent halogenated hydrocarbon group, or a monovalent group having a heterocyclic structure.
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公开(公告)号：US11130856B2
公开(公告)日：2021-09-28
申请号：US16395337
申请日：2019-04-26
Applicant: JSR CORPORATION
Inventor： Tomohiko Sakurai , Sosuke Osawa , Hiromitsu Nakashima
IPC: C08L41/00 , G03F7/11 , C08L101/04 , C08L101/08 , G03F7/039 , H01L21/027 , C08L101/06 , G03F7/20 , G03F7/004 , G03F7/38
Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.
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10.发明申请公开(公告)号：US20190004426A1
公开(公告)日：2019-01-03
申请号：US16104170
申请日：2018-08-17
Applicant: JSR CORPORATION
Inventor： Taiichi Furukawa , Sosuke Osawa
Abstract: Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom.
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