公开(公告)号：JP2011155302A

公开(公告)日：2011-08-11

申请号：JP2011103027

申请日：2011-05-02

Applicant: Kla-Tencor Corp ,  ケーエルエー−テンカー コーポレイション

Inventor： MIEHER WALTER D ,  LEVY ADY ,  GOLOVANEVSKY BORIS ,  FRIEDMANN MICHAEL ,  SMITH IAN ,  ADEL MICHAEL ,  FABRIKANT ANATOLY ,  BEVIS CHRISTOPHER F ,  FIELDEN JOHN ,  BAREKET NOAH ,  GROSS KENNETH P ,  ZALICKI PIOTR ,  WACK DAN ,  DECECCO PAOLA ,  GHINOVKER MARK ,  MOSHE BARUCH ,  KNOLL NOAM

IPC: H01L21/027 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

Abstract: PROBLEM TO BE SOLVED: To provide a method of determining an overlay error between two layers of a multiple layer sample. SOLUTION: For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error between the first and second structures is determined by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets. The optical system includes any one or more of a reflectometric system, polarimetric system, imaging system, interferometric system and/or scan angle system. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种确定多层样品的两层之间的覆盖误差的方法。 解决方案：对于每个具有由第一层形成的第一结构和由第二层样品形成的第二结构的多个周期性目标，采用光学系统，从而测量来自每个 定期目标。 在第一和第二结构之间有预定义的偏移。 通过使用基于预定义的偏移的散射测量覆盖技术来分析来自周期性目标的所测量的光信号来确定第一和第二结构之间的重叠误差。 光学系统包括反射测量系统，偏振系统，成像系统，干涉系统和/或扫描角度系统中的任何一个或多个。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：SG2014008841A

公开(公告)日：2015-01-29

申请号：SG2014008841

申请日：2013-05-21

Applicant: KLA TENCOR CORP

Inventor： AMIR NURIEL ,  COHEN GUY ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL

IPC: H01L21/027 ,  G03F1/42

Abstract: The disclosure is directed to designing and using an overlay target with orthogonal underlayer dummyfill. According to various embodiments, an overlay target may include one or more segmented overlay pattern elements forming at least one overlay target structure. The overlay target may further include one or more inactive pattern elements forming at least one dummyfill target structure. Each of the one or more inactive pattern elements may include dummyfill segmented along an axis orthogonal to a segmentation axis of at least one proximately disposed overlay pattern element. In some embodiments, each of the target structures or layers may be formed from a separate process layer successively disposed upon a substrate, such as a silicon wafer. In some embodiments, the overlay and dummyfill target structures may be twofold or fourfold rotationally symmetric to allow for certain manufacturing or metrology advantages.