公开(公告)号：SG11201606847YA

公开(公告)日：2016-10-28

申请号：SG11201606847Y

申请日：2015-03-16

Applicant: KLA TENCOR CORP

Inventor： SMITH MARK D ,  BIAFORE JOHN J

IPC: H01L21/027

Abstract: A photoresist modelling system includes a mathematical model for a photolithography process. The mathematical model may be executable using a computer processor. The mathematical model may be used to model a photoresist as formed on a semiconductor wafer surface. A blocked polymer concentration gradient equation may be implemented into the mathematical model. The blocked polymer concentration gradient equation may describe an initial concentration gradient of a blocked polymer in the photoresist being modelled by the mathematical model.

公开(公告)号：WO2011059947A3

公开(公告)日：2011-10-13

申请号：PCT/US2010055937

申请日：2010-11-09

Applicant: KLA TENCOR CORP ,  BIAFORE JOHN J ,  SMITH MARK D ,  GRAVES JOHN S ,  BLANKENSHIP DAVID

Inventor： BIAFORE JOHN J ,  SMITH MARK D ,  GRAVES JOHN S ,  BLANKENSHIP DAVID

IPC: H01L21/30 ,  G03C5/00 ,  H01L21/027

CPC classification number: G06F19/702 ,  G03F7/0045

Abstract: A processor based method for measuring dimensional properties of a photoresist profile by determining a number acid generators and quenchers within a photoresist volume, determining a number of photons absorbed by the photoresist volume, determining a number of the acid generators converted to acid, determining a number of acid and quencher reactions within the photoresist volume, calculating a development of the photoresist volume, producing with the processor a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume, and measuring the dimensional properties of the photoresist profile.

Abstract translation: 一种基于处理器的方法，用于通过确定光致抗蚀剂体积内的数量的酸产生剂和猝灭剂来测量光致抗蚀剂轮廓的尺寸性质，确定由光致抗蚀剂体积吸收的光子数量，确定转化为酸的酸数发生器的数量， 在光致抗蚀剂体积内的酸和猝灭反应，计算光致抗蚀剂体积的发展，用处理器产生通过光刻胶体积的发展产生的光致抗蚀剂轮廓的三维模拟扫描电子显微镜图像，并且测量光致抗蚀剂体积的尺寸特性 光致抗蚀剂轮廓。

公开(公告)号：EP2499661A4

公开(公告)日：2014-03-05

申请号：EP10830578

申请日：2010-11-09

Applicant: KLA TENCOR CORP

Inventor： BIAFORE JOHN J ,  SMITH MARK D ,  GRAVES JOHN S ,  BLANKENSHIP DAVID

IPC: H01L21/30 ,  G03C5/00 ,  H01L21/027

CPC classification number: G06F19/702 ,  G03F7/0045

Abstract: A processor based method for measuring dimensional properties of a photoresist profile. A number acid generators and quenchers within a photoresist volume is determined. A number of photons absorbed by the photoresist volume is determined. A number of the acid generators converted to acid is determined. A number of acid and quencher reactions within the photoresist volume is determined. A development of the photoresist volume is calculated. The processor is used to produce a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume. The dimensional properties of the photoresist profile are measured.

Abstract translation: 一种用于测量光致抗蚀剂轮廓的尺寸特性的基于处理器的方法。 确定光致抗蚀剂体积内的酸产生剂和猝灭剂。 确定由光致抗蚀剂体积吸收的许多光子。 确定转化为酸的多种酸产生剂。 确定光致抗蚀剂体积内的许多酸和猝灭剂反应。 计算光致抗蚀剂体积的发展。 该处理器用于产生通过光刻胶体积的发展产生的光致抗蚀剂轮廓的三维模拟扫描电子显微镜图像。 测量光致抗蚀剂轮廓的尺寸特性。