公开(公告)号：KR20180030722A

公开(公告)日：2018-03-23

申请号：KR20187007128

申请日：2016-08-12

Applicant: KLA TENCOR CORP

Inventor： LEE MYUNGJUN ,  SMITH MARK D ,  KAPASI SANJAY ,  PANDEV STILLIAN ,  SANKO DIMITRY ,  SUBRAHMANYAN PRADEEP ,  LEVY ADY

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/027 ,  H01L21/66

CPC classification number: G03F7/70558 ,  G03F7/70091 ,  G03F7/70641

Abstract: 리소그래피시스템은조명소스및 투영광학장치의세트를포함한다. 조명소스는축외조명폴로부터의조명의빔을패턴마스크로지향시킨다. 패턴마스크는조명폴로부터의조명을포함하는회절빔의세트를생성하기위한패턴엘리먼트의세트를포함한다. 투영광학장치의세트에의해수신되는회절빔의세트중 적어도두 개의회절빔은투영광학장치의세트의동공평면에서비대칭적으로분포된다. 회절빔의세트중 적어도두 개의회절빔은, 패턴엘리먼트의세트의이미지에대응하는제조엘리먼트의세트를형성하도록샘플에비대칭적으로입사한다. 샘플상의제조엘리먼트의세트는투영광학장치의세트의광학축을따르는샘플의위치의하나이상의지표를포함한다.

Abstract translation: 光刻系统包括照明源和一组投影光学器件。 照明源将照明光束从离轴照明杆引导到图案掩模。 图案掩模包括一组图案元件，用于产生包括来自照明杆的照明的一组衍射束。 由该组投影光学器件接收的至少两组衍射光束不对称分布在该组投影光学器件的光瞳平面中。 至少两组衍射光束不对称地入射在样本上以形成对应于该组图案元素的图像的一组制造元件。 样品上的一组制造元件包括样品沿该组投影光学器件的光轴的位置的一个或多个指示符。

公开(公告)号：WO2018129088A1

公开(公告)日：2018-07-12

申请号：PCT/US2018012249

申请日：2018-01-03

Applicant: KLA TENCOR CORP

Inventor： LEE MYUNGJUN ,  ROBERTSON STEWART ,  SMITH MARK D ,  SUBRAHMANYAN PRADEEP

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/66

CPC classification number: G03F7/70641

Abstract: A lithography system includes an illumination source, one or more projection optical elements, and a pattern mask. The illumination source includes one or more illumination poles. The pattern mask includes a set of focus-sensitive mask elements periodically distributed with a pitch, wherein the set of focus-sensitive mask elements is configured to diffract illumination from the one or more illumination poles. The pitch is selected such that two diffraction orders of illumination associated with each of the one or more illumination poles are asymmetrically distributed in a pupil plane of the one or more projection optical elements. Further, the one or more projection optical elements are configured to expose a sample with an image of the set of focus-sensitive pattern mask elements based on the two diffraction orders of illumination associated with each of the one or more illumination poles. Additionally, one or more printing characteristics of the image of the set of focus-sensitive pattern mask elements on the sample is indicative of a position of the sample within a focal volume of the one or more projection optical elements.

公开(公告)号：EP3295478A1

公开(公告)日：2018-03-21

申请号：EP16793288

申请日：2016-05-07

Applicant: KLA TENCOR CORP

Inventor： PANDEV STILIAN ,  KAPASI SANJAY ,  SMITH MARK D ,  LEVY ADY

IPC: H01L21/66

CPC classification number: G01B11/00 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and systems for monitoring parameters characterizing a set of hot spot structures fabricated at different locations on a semiconductor wafer are presented herein. The hot spot structures are device structures that exhibit sensitivity to process variations and give rise to limitations on permissible process variations that must be enforced to prevent device failures and low yield. A trained hot spot measurement model is employed to receive measurement data generated by one or more metrology systems at one or more metrology targets and directly determine values of one or more hot spot parameters. The hot spot measurement model is trained to establish a functional relationship between one or more characteristics of a hot spot structure under consideration and corresponding measurement data associated with measurements of at least one metrology target on the same wafer. A fabrication process parameter is adjusted based on the value of a measured hot spot parameter.

公开(公告)号：WO2011059947A3

公开(公告)日：2011-10-13

申请号：PCT/US2010055937

申请日：2010-11-09

Applicant: KLA TENCOR CORP ,  BIAFORE JOHN J ,  SMITH MARK D ,  GRAVES JOHN S ,  BLANKENSHIP DAVID

Inventor： BIAFORE JOHN J ,  SMITH MARK D ,  GRAVES JOHN S ,  BLANKENSHIP DAVID

IPC: H01L21/30 ,  G03C5/00 ,  H01L21/027

CPC classification number: G06F19/702 ,  G03F7/0045

Abstract: A processor based method for measuring dimensional properties of a photoresist profile by determining a number acid generators and quenchers within a photoresist volume, determining a number of photons absorbed by the photoresist volume, determining a number of the acid generators converted to acid, determining a number of acid and quencher reactions within the photoresist volume, calculating a development of the photoresist volume, producing with the processor a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume, and measuring the dimensional properties of the photoresist profile.

Abstract translation: 一种基于处理器的方法，用于通过确定光致抗蚀剂体积内的数量的酸产生剂和猝灭剂来测量光致抗蚀剂轮廓的尺寸性质，确定由光致抗蚀剂体积吸收的光子数量，确定转化为酸的酸数发生器的数量， 在光致抗蚀剂体积内的酸和猝灭反应，计算光致抗蚀剂体积的发展，用处理器产生通过光刻胶体积的发展产生的光致抗蚀剂轮廓的三维模拟扫描电子显微镜图像，并且测量光致抗蚀剂体积的尺寸特性 光致抗蚀剂轮廓。

公开(公告)号：EP2499661A4

公开(公告)日：2014-03-05

申请号：EP10830578

申请日：2010-11-09

Applicant: KLA TENCOR CORP

Inventor： BIAFORE JOHN J ,  SMITH MARK D ,  GRAVES JOHN S ,  BLANKENSHIP DAVID

IPC: H01L21/30 ,  G03C5/00 ,  H01L21/027

CPC classification number: G06F19/702 ,  G03F7/0045

Abstract: A processor based method for measuring dimensional properties of a photoresist profile. A number acid generators and quenchers within a photoresist volume is determined. A number of photons absorbed by the photoresist volume is determined. A number of the acid generators converted to acid is determined. A number of acid and quencher reactions within the photoresist volume is determined. A development of the photoresist volume is calculated. The processor is used to produce a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume. The dimensional properties of the photoresist profile are measured.

Abstract translation: 一种用于测量光致抗蚀剂轮廓的尺寸特性的基于处理器的方法。 确定光致抗蚀剂体积内的酸产生剂和猝灭剂。 确定由光致抗蚀剂体积吸收的许多光子。 确定转化为酸的多种酸产生剂。 确定光致抗蚀剂体积内的许多酸和猝灭剂反应。 计算光致抗蚀剂体积的发展。 该处理器用于产生通过光刻胶体积的发展产生的光致抗蚀剂轮廓的三维模拟扫描电子显微镜图像。 测量光致抗蚀剂轮廓的尺寸特性。

公开(公告)号：SG11201708164YA

公开(公告)日：2017-11-29

申请号：SG11201708164Y

申请日：2016-04-19

Applicant: KLA TENCOR CORP

Inventor： LEE MYUNGJUN ,  SMITH MARK D ,  ADEL MICHAEL E ,  AMIT ERAN ,  KANDEL DANIEL

IPC: H01L21/66

Abstract: Metrology methods, modules and targets are provided, for measuring tilted device designs. The methods analyze and optimize target design with respect to the relation of the Zernike sensitivity of pattern placement errors (PPEs) between target candidates and device designs. Monte Carlo methods may be applied to enhance the robustness of the selected target candidates to variation in lens aberration and/or in device designs. Moreover, considerations are provided for modifying target parameters judiciously with respect to the Zernike sensitivities to improve metrology measurement quality and reduce inaccuracies.

公开(公告)号：SG11201708137VA

公开(公告)日：2017-11-29

申请号：SG11201708137V

申请日：2016-04-06

Applicant: KLA TENCOR CORP

Inventor： SMITH MARK D ,  SOLOMON JOSE ,  SHERWIN STUART ,  MIEHER WALTER D ,  LEVY ADY

IPC: H01L21/66 ,  H01L21/687

Abstract: The determination of in-plane distortions of a substrate includes measuring one or more out-of-plane distortions of the substrate in an unchucked state, determining an effective film stress of a film on the substrate in the unchucked state based on the measured out-of-plane distortions of the substrate in the unchucked state, determining in-plane distortions of the substrate in a chucked state based on the effective film stress of the film on the substrate in the unchucked state and adjusting at least one of a process tool or an overlay tool based on at least one of the measured out-of-plane distortions or the determined in-plane distortions.

公开(公告)号：SG11202010083TA

公开(公告)日：2020-11-27

申请号：SG11202010083T

申请日：2018-12-20

Applicant: KLA TENCOR CORP

Inventor： VUKKADALA PRADEEP ,  SMITH MARK D ,  LEVY ADY ,  DIGHE PRASANNA ,  MUELLER DIETER

IPC: H01L21/67 ,  H01L21/033

Abstract: A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.

公开(公告)号：SG11201606847YA

公开(公告)日：2016-10-28

申请号：SG11201606847Y

申请日：2015-03-16

Applicant: KLA TENCOR CORP

Inventor： SMITH MARK D ,  BIAFORE JOHN J

IPC: H01L21/027

Abstract: A photoresist modelling system includes a mathematical model for a photolithography process. The mathematical model may be executable using a computer processor. The mathematical model may be used to model a photoresist as formed on a semiconductor wafer surface. A blocked polymer concentration gradient equation may be implemented into the mathematical model. The blocked polymer concentration gradient equation may describe an initial concentration gradient of a blocked polymer in the photoresist being modelled by the mathematical model.