公开(公告)号：SG11202001694XA

公开(公告)日：2020-07-29

申请号：SG11202001694X

申请日：2018-12-10

Applicant: KLA TENCOR CORP

Inventor： GUTMAN NADAV ,  AMIT ERAN ,  EYRING STEFAN ,  PATHANGI SRIRAMAN HARI ,  LASKE FRANK ,  POHLMANN ULRICH ,  HEIDRICH THOMAS

IPC: G03F7/20 ,  G01N21/84 ,  H01L21/66 ,  H01L21/67

Abstract: An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.

公开(公告)号：SG11202002413UA

公开(公告)日：2020-06-29

申请号：SG11202002413U

申请日：2018-12-06

Applicant: KLA TENCOR CORP

Inventor： LASKE FRANK ,  POHLMANN ULRICH ,  EYRING STEFAN ,  GUTMAN NADAV

IPC: G03F7/20

Abstract: An overlay metrology system may measure a first-layer pattern placement distance between a pattern of device features and a pattern of reference features on a first layer of an overlay target on a sample. The system may further measure, subsequent to fabricating a second layer including at least the pattern of device features and the pattern of reference features, a second-layer pattern placement distance between the pattern of device features and the pattern of reference features on the second layer. The system may further measure a reference overlay based on relative positions of the pattern of reference features on the first layer and the second layer. The system may further determine a device-relevant overlay for the pattern of device-scale features by adjusting the reference overlay with a difference between the first-layer pattern placement distance and the second-layer pattern placement distance.