公开(公告)号：SG11202001694XA

公开(公告)日：2020-07-29

申请号：SG11202001694X

申请日：2018-12-10

Applicant: KLA TENCOR CORP

Inventor： GUTMAN NADAV ,  AMIT ERAN ,  EYRING STEFAN ,  PATHANGI SRIRAMAN HARI ,  LASKE FRANK ,  POHLMANN ULRICH ,  HEIDRICH THOMAS

IPC: G03F7/20 ,  G01N21/84 ,  H01L21/66 ,  H01L21/67

Abstract: An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.

公开(公告)号：DE112014005893T5

公开(公告)日：2016-09-22

申请号：DE112014005893

申请日：2014-12-09

Applicant: KLA TENCOR CORP

Inventor： LASKE FRANK ,  DANESHPANAH MOHAMMAD M ,  CZERKAS SLAWOMIR ,  WAGNER MARK

IPC: H01L21/66

Abstract: Die Erfindung offenbart ein Verfahren zum Messen von Positionen von Strukturen auf einer Maske und dadurch werden Maskenherstellungsfehler bestimmt. Es wird gezeigt, dass aus einer Vielzahl von Messstellen ein Einfluss eines optischen Proximity-Effekts auf eine Messung der Position von Strukturen auf der Maske mit einer Metrologiemaschine bestimmt wird. Ein gerendertes Bild der Datendarstellung der Strukturen wird erhalten. Zusätzlich wird mindestens ein optisches Bild des Musters innerhalb der Fläche auf der Maske mit dem Abbildungssystem der Metrologiemaschine aufgenommen. Das Bildfeld der Metrologiemaschine ist bezüglich der Größe des ausgewählten Bereichs der Designdaten der Maske annähernd identisch. Schließlich wird ein Residuum bestimmt, was die durch den Proximity-Effekt bedingte Herstellung zeigt.

公开(公告)号：WO2011026055A2

公开(公告)日：2011-03-03

申请号：PCT/US2010047197

申请日：2010-08-31

Applicant: KLA TENCOR CORP ,  CHOI DONGSUB ,  WIDMANN AMIR ,  SAIDIN ZAIN ,  LASKE FRANK ,  ROBINSON JOHN

Inventor： CHOI DONGSUB ,  WIDMANN AMIR ,  SAIDIN ZAIN ,  LASKE FRANK ,  ROBINSON JOHN

IPC: H01L21/027 ,  G03F1/08

CPC classification number: G03F7/70683 ,  G03F7/70633 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.

Abstract translation: 公开了组合的计量标记，系统和用于计算半导体电路上的对准的方法。 组合的计量标记可以包括掩模对准结构和晶片重叠标记结构。

公开(公告)号：SG11202008005WA

公开(公告)日：2020-09-29

申请号：SG11202008005W

申请日：2019-03-04

Applicant: KLA TENCOR CORP

Inventor： SHCHEGROV ANDREI V ,  LASKE FRANK ,  GUTMAN NADAV

IPC: G03F7/20

Abstract: An overlay metrology system may include a controller to generate optical tool error adjustments for a hybrid overlay target including optically-resolvable features and device-scale features by measuring a difference between an optical overlay measurement based on the optically-resolvable features and a device-scale overlay measurement based on the device-scale features, generate target-to-device adjustments for the hybrid overlay target based on positions of features within the device area, determine device-relevant overlay measurements for one or more locations in the device area based on at least one of the optical overlay measurement, the optical tool error adjustments, or the target-to-device adjustments, and provide overlay correctables for the device area to a lithography tool to modify exposure conditions for at least one subsequent exposure based on the device-relevant overlay measurements.

公开(公告)号：SG11202002413UA

公开(公告)日：2020-06-29

申请号：SG11202002413U

申请日：2018-12-06

Applicant: KLA TENCOR CORP

Inventor： LASKE FRANK ,  POHLMANN ULRICH ,  EYRING STEFAN ,  GUTMAN NADAV

IPC: G03F7/20

Abstract: An overlay metrology system may measure a first-layer pattern placement distance between a pattern of device features and a pattern of reference features on a first layer of an overlay target on a sample. The system may further measure, subsequent to fabricating a second layer including at least the pattern of device features and the pattern of reference features, a second-layer pattern placement distance between the pattern of device features and the pattern of reference features on the second layer. The system may further measure a reference overlay based on relative positions of the pattern of reference features on the first layer and the second layer. The system may further determine a device-relevant overlay for the pattern of device-scale features by adjusting the reference overlay with a difference between the first-layer pattern placement distance and the second-layer pattern placement distance.