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    레이저 생성 플라즈마 광원을 위한 액적 생성
    1.
    发明公开
    레이저 생성 플라즈마 광원을 위한 액적 생성 审中-公开

    公开(公告)号：KR20180067709A

    公开(公告)日：2018-06-20

    申请号：KR20187016153

    申请日：2016-11-10

    Applicant: KLA TENCOR CORP

    Inventor： AHR BRIAN ,  BYKANOV ALEXANDER ,  GARCIA RUDY ,  HALE LAYTON C ,  KHODYKIN OLEG

    IPC: H05G2/00 ,  G03F7/20

    CPC classification number: H05G2/008 ,  H05G2/006 ,  H05H2240/00

    Abstract: 본개시는액체타겟재료를분배하기위한노즐; 하나이상의중간챔버(들)를구비하는디바이스에관한것으로, 각각의중간챔버는타겟재료를수용하도록배치되며레이저생성플라즈마(LPP) 챔버에서의하류조사를위해타겟재료를출력하기위한출구어퍼쳐를가지고형성된다. 개시된몇몇실시형태에서, 디바이스의중간챔버(들) 중하나, 몇몇또는모두에서가스온도, 가스압력및 가스조성중 하나이상을제어하기위한제어시스템이포함된다. 하나의실시형태에서, 조정가능한길이를갖는중간챔버가개시된다.

    원통형 대칭 엘리먼트 상에 타겟 재료가 코팅된 레이저 생성 플라즈마 광원
    2.
    发明公开
    원통형 대칭 엘리먼트 상에 타겟 재료가 코팅된 레이저 생성 플라즈마 광원 审中-公开

    公开(公告)号：KR20180071397A

    公开(公告)日：2018-06-27

    申请号：KR20187016887

    申请日：2016-11-16

    Applicant: KLA TENCOR CORP

    Inventor： KURITSYN ALEXEY ,  AHR BRIAN ,  GARCIA RUDY ,  CHILESE FRANK ,  KHODYKIN OLEG

    IPC: H05G2/00

    CPC classification number: H05G2/008

    Abstract: 본개시는, 드럼의외부표면상에코팅되는, 크세논(Xenon)과같은타겟재료를갖는레이저생성플라즈마광원에관한것이다. 실시형태는 LPP 챔버로의오염물질및/또는베어링가스의누출을감소시키기위한구조체를구비하는드럼을회전시키기위한베어링시스템을포함한다. 드럼상의타겟재료를코팅하고보충하기위한주입시스템이개시된다. 드럼상에타겟재료표면을준비하기위한, 예를들면, 타겟재료표면의평활화를위한와이퍼시스템이개시된다. 드럼의온도를냉각및 유지하기위한시스템및 드럼위에놓이는하우징이또한개시된다.

    METHOD AND SYSTEM FOR GAS FLOW MITIGATION OF MOLECULAR CONTAMINATION OF OPTICS
    3.
    发明公开
    METHOD AND SYSTEM FOR GAS FLOW MITIGATION OF MOLECULAR CONTAMINATION OF OPTICS 有权
    VERFAHREN UND系统ZUR GURDURCHFLUSSREDUZIERUNG在MOLEKULAREN VERUNREINIGUNGEN VON OPTISCHEN ELEMENTEN

    公开(公告)号：EP2959504A4

    公开(公告)日：2017-01-18

    申请号：EP14754941

    申请日：2014-02-25

    Applicant: KLA-TENCOR CORP ,  SANDIA CORP

    Inventor： DELGADO GILDARDO ,  JOHNSON TERRY ,  ARIENTI MARCO ,  HARB SALAM ,  KLEBANOFF LENNIE ,  GARCIA RUDY ,  TAHMASSEBPUR MOHAMMED ,  SCOTT SARAH

    IPC: G03F7/20 ,  H01L21/66

    CPC classification number: G01N21/15 ,  G01N21/9501 ,  G01N2021/151 ,  G03F7/705 ,  G03F7/70933

    Abstract: A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.

    Abstract translation: 一种用于在半导体检测计量或光刻设备中确定优化的吹扫气体流的计算机实现的方法，包括接收允许的污染物摩尔分数，与污染物相关的污染物除气流量，污染物质量扩散系数，脱气表面长度 ，压力，温度，通道高度和吹扫气体的分子量，基于允许的污染物摩尔分数，污染物除气流量，通道高度和除气表面长度计算流量因子，比较 流量因子到预定的最大流量因子值，从流动因子，污染物质量扩散性，压力，温度和吹扫气体的分子量计算最小净化气体速度和净化气体质量流量，并引入 吹扫气体进入具有最小清洗气体速度的半导体检测计量或光刻设备 净化气体流量。

    SYSTEM AND METHOD FOR CLEANING EUV OPTICAL ELEMENTS
    5.
    发明公开
    SYSTEM AND METHOD FOR CLEANING EUV OPTICAL ELEMENTS 审中-公开
    SYSTEM UND VERFAHREN ZUR REINIGUNG OPTISCHER EUV-ELEMENTE

    公开(公告)号：EP3087432A4

    公开(公告)日：2017-08-23

    申请号：EP14875394

    申请日：2014-12-23

    Applicant: KLA-TENCOR CORP

    Inventor： DELGADO GILDARDO ,  CHILESE FRANCIS C ,  GARCIA RUDY

    IPC: G03F7/20

    CPC classification number: G03F7/70033 ,  G03F7/70925 ,  G03F7/70933

    Abstract: A system for cleaning or suppressing contamination or oxidation in a EUV optical setting includes an illumination source, a detector, a first set of optical elements to direct light from the illumination source to a specimen and a second set of optical elements to receive illumination from the specimen and direct the illumination to the detector. The system also includes one or more vacuum chambers for containing the first and second set of optical elements and containing a selected purge gas ionizable by the light emitted by the illumination source. The first or second set of optical elements includes an electrically biased optical element having at least one electrically biased surface. The electrically biased optical element has a bias configuration suitable to attract one or more ionic species of the selected purge gas to the electrically biased surface in order to clean contaminants from the electrically biased surface.

    Abstract translation: 用于清洁或抑制EUV光学设置中的污染或氧化的系统包括照明源，检测器，将来自照明源的光引导至样本的第一组光学元件，以及第二组光学元件以接收来自 标本并将照明引导至检测器。 该系统还包括一个或多个真空室，用于容纳第一和第二组光学元件并包含通过照明源发射的光可电离的选定吹扫气体。 第一或第二组光学元件包括具有至少一个电偏置表面的电偏置光学元件。 电偏置的光学元件具有适合于将所选择的吹扫气体的一种或多种离子物质吸引到电偏置表面以便从电偏置表面清除污染物的偏置配置。

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