REDUCING DEVICE OVERLAY ERRORS
    1.
    发明专利

    公开(公告)号:SG11202100406YA

    公开(公告)日:2021-03-30

    申请号:SG11202100406Y

    申请日:2018-07-30

    Abstract: Process control methods, metrology targets and production systems are provided for reducing or eliminating process overlay errors. Metrology targets have pair(s) of periodic structures with different segmentations, e.g., no segmentation in one periodic structure and device-like segmentation in the other periodic structure of the pair. Process control methods derive metrology measurements from the periodic structures at the previous layer directly following the production thereof, and prior to production of the periodic structures at the current layer, and use the derived measurements to adjust lithography stage(s) that is part of production of the current layer. Production system integrate lithography tool(s) and metrology tool(s) into a production feedback loop that enables layer-by-layer process adjustments.

    LITHOGRAPHY SYSTEMS WITH INTEGRATED METROLOGY TOOLS HAVING ENHANCED FUNCTIONALITIES

    公开(公告)号:SG11201903730XA

    公开(公告)日:2019-05-30

    申请号:SG11201903730X

    申请日:2017-08-21

    Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 111111101111011101 HIM 0110100111111111111111111111111111111111111111111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2018/089076 Al 17 May 2018 (17.05.2018) WIPO I PCT (51) International Patent Classification: (74) Agent: MCANDREWS, Kevin et al.; KLA-Tencor Corpo- GO3F 7/20 (2006.01) HO1L 21/027 (2006.01) ration, Legal Department, One Technology Drive, Milpitas, GO3F 7/00 (2006.01) California 95035 (US). (21) International Application Number: (81) Designated States (unless otherwise indicated, for every PCT/US2017/047742 kind of national protection available): AE, AG, AL, AM, (22) International Filing Date: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, 21 August 2017 (21.08.2017) CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, (25) Filing Language: English HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, (26) Publication Language: English KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, (30) Priority Data: OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, 62/421,932 14 November 2016 (14.11.2016) US SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- (84) Designated States (unless otherwise indicated, for every fornia 95035 (US). kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, (72) Inventors: AMIT, Eran; Geva 3/6 Pardes Hanna-Karkur, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, 37061 Haifa (IL). VOLKOVICH, Roie; Shderot Alexan-TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, der 10/10, 3824969 Hadera (IL). YERUSHALMI, Liran; EE, ES, FL FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, 43 Inbar, 30900 Zicron Yaacob (IL). — MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, = = _ (54) Title: LITHOGRAPHY SYSTEMS WITH INTEGRATED METROLOGY TOOLS HAVING ENHANCED FUNCTION- = ALITIES 100 = 80 80 160 170 = S S S S _ — = Metrology tool _ .. . A Metrology tool P rocess control SW Grouping of control based on landscape = _ .. . = 85 130 --... = 110, 120 ----.. \"-.. = ..... . ' = --/ - `140 ---c• 150 = IM tool = Printing tool Control 4—* module Processor(s) 9 0 105 -----) /1/ '\"----\ 112 1-1 Figure 7 IN © (;;;N (57) : Lithography systems and methods are provided with enhanced performance based on broader utilization of the integrated GC metrology tool in the printing tool to handle the metrology measurements in the system in a more sophisticated and optimized way. 0 ---- Additional operation channels are disclosed, enabling the integrated metrology tool to monitor and/or allocate metrology measurements GC thereby and by a standalone metrology tool with respect to specified temporal limitations of the printing tool; to adjust and optimize 1-1 C the metrology measurement recipes; to provide better process control to optimize process parameters of the printing tool; as well as to ei group process parameters of the printing tool according to a metrology measurements landscape. C [Continued on next page] WO 2018/089076 Al MIDEDIMOMMIDIREIDINIREHOMMIHMOVOIMIE TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))

    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY
    3.
    发明公开
    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY 审中-公开
    FOKUSMESSUNGEN MIT SCATTEROMETRIE

    公开(公告)号:EP3126893A4

    公开(公告)日:2017-10-04

    申请号:EP15774184

    申请日:2015-03-30

    Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

    Abstract translation: 提供了目标设计和方法,其涉及具有在第一方向上以第一间距重复的元素的周期性结构。 元件沿着垂直于第一方向的第二方向以第二节距周期性地定向,并且在第二方向上通过具有第二节距的交替的聚焦敏感和聚焦不敏感的图案来表征。 在产生的目标中,第一间距可以是大约设备间距,并且第二间距可以大几倍。 可以产生第一焦点不敏感图案以产生第一临界尺寸,并且可以产生第二焦点敏感图案以产生仅当满足特定焦点要求时可以等于第一临界尺寸的第二临界尺寸, 或基于沿着垂直方向的较长节距提供零级散射测量以及第一衍射级。

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