公开(公告)号：EP3126893A4

公开(公告)日：2017-10-04

申请号：EP15774184

申请日：2015-03-30

Applicant: KLA-TENCOR CORP

Inventor： EL KODADI MOHAMMED ,  AMIR NURIEL ,  VOLKOVICH ROIE ,  LEVINSKI VLADIMIR ,  FELER YOEL ,  KANDEL DANIEL ,  GUTMAN NADAV ,  PANDEV STILIAN ,  SANKO DZMITRY

IPC: G02B15/14 ,  G01N21/47 ,  G03F7/20 ,  G06F17/50 ,  H04N7/18

CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

Abstract translation: 提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元素的周期性结构。 元件沿着垂直于第一方向的第二方向以第二节距周期性地定向，并且在第二方向上通过具有第二节距的交替的聚焦敏感和聚焦不敏感的图案来表征。 在产生的目标中，第一间距可以是大约设备间距，并且第二间距可以大几倍。 可以产生第一焦点不敏感图案以产生第一临界尺寸，并且可以产生第二焦点敏感图案以产生仅当满足特定焦点要求时可以等于第一临界尺寸的第二临界尺寸， 或基于沿着垂直方向的较长节距提供零级散射测量以及第一衍射级。

公开(公告)号：EP3295478A1

公开(公告)日：2018-03-21

申请号：EP16793288

申请日：2016-05-07

Applicant: KLA TENCOR CORP

Inventor： PANDEV STILIAN ,  KAPASI SANJAY ,  SMITH MARK D ,  LEVY ADY

IPC: H01L21/66

CPC classification number: G01B11/00 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and systems for monitoring parameters characterizing a set of hot spot structures fabricated at different locations on a semiconductor wafer are presented herein. The hot spot structures are device structures that exhibit sensitivity to process variations and give rise to limitations on permissible process variations that must be enforced to prevent device failures and low yield. A trained hot spot measurement model is employed to receive measurement data generated by one or more metrology systems at one or more metrology targets and directly determine values of one or more hot spot parameters. The hot spot measurement model is trained to establish a functional relationship between one or more characteristics of a hot spot structure under consideration and corresponding measurement data associated with measurements of at least one metrology target on the same wafer. A fabrication process parameter is adjusted based on the value of a measured hot spot parameter.

公开(公告)号：EP2979297A4

公开(公告)日：2017-02-22

申请号：EP14773831

申请日：2014-03-25

Applicant: KLA-TENCOR CORP

Inventor： PANDEV STILIAN ,  MADSEN JONATHAN

IPC: H01L21/66 ,  H01L21/00

CPC classification number: G03F7/70558 ,  G03F7/70641 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems for creating a measurement model based on measured training data are presented. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measured data collected from other wafers. The measurement models receive measurement data directly as input and provide process parameter values, structure parameter values, or both, as output. The measurement model enables the direct measurement of process parameters. Measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement, may be derived from measurements performed by a combination of multiple, different measurement techniques.

Abstract translation: 介绍了基于测量训练数据创建测量模型的方法和系统。 训练后的测量模型用于直接从其他晶圆收集的测量数据中计算过程参数值，结构参数值或两者。 测量模型直接作为输入接收测量数据，并提供过程参数值，结构参数值或两者作为输出。 测量模型可以直接测量工艺参数。 收集来自多个目标的测量数据，用于模型构建，训练和测量。 在一些示例中，使用与多个目标相关联的测量数据可消除或显着降低测量结果中下层的影响，并可实现更准确的测量。 用于模型建立，训练和测量收集的测量数据可以通过多种不同测量技术的组合进行的测量得出。

公开(公告)号：EP2774175A4

公开(公告)日：2015-08-26

申请号：EP12846765

申请日：2012-10-26

Applicant: KLA TENCOR CORP

Inventor： PANDEV STILIAN

IPC: H01L21/66 ,  G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/705