公开(公告)号：EP2907157A4

公开(公告)日：2016-06-15

申请号：EP13847706

申请日：2013-10-11

Applicant: KLA TENCOR CORP

Inventor： WU KENONG ,  WU MENG-CHE ,  GAO LISHENG

IPC: H01L21/20 ,  G01N21/95 ,  G06T7/00

CPC classification number: G06T7/001 ,  G01N21/9501 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: Methods and systems for detecting defects on a wafer using defect-specific information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest formed on the wafer and a known DOI occurring proximate to or in the pattern of interest. The information includes an image of the target on the wafer. The method also includes searching for target candidates on the wafer or another wafer. The target candidates include the pattern of interest. The target and target candidate locations are provided to defect detection. In addition, the method includes detecting the known DOI in the target candidates by identifying potential DOI locations in images of the target candidates and applying one or more detection parameters to images of the potential DOI locations.

Abstract translation: 提供了使用缺陷特定信息检测晶片上的缺陷的方法和系统。 一种方法包括获取晶片上目标的信息。 目标包括在晶片上形成的兴趣模式，以及在感兴趣的模式附近发生的已知DOI。 信息包括晶片上的目标图像。 该方法还包括在晶片或另一晶片上搜索目标候选。 目标候选人包括感兴趣的模式。 将目标候选位置和目标候选位置提供给缺陷检测。 此外，该方法包括通过识别目标候选图像中的潜在DOI位置并将一个或多个检测参数应用于潜在DOI位置的图像来检测目标候选物中的已知DOI。