公开(公告)号：WO2005092025A3

公开(公告)日：2007-05-18

申请号：PCT/US2005009324

申请日：2005-03-22

Applicant: KLA TENCOR TECH CORP ,  NASSER-GHODSI MEHRAN ,  BOROWICZ MARK ,  BAKKER DAVE ,  VAEZ-IRAVANI MEHDI ,  AJI PRASHANT ,  GARCIA RUDY F ,  CHUANG TZU CHIN

Inventor： NASSER-GHODSI MEHRAN ,  BOROWICZ MARK ,  BAKKER DAVE ,  VAEZ-IRAVANI MEHDI ,  AJI PRASHANT ,  GARCIA RUDY F ,  CHUANG TZU CHIN

IPC: H01L21/00 ,  A61N5/00 ,  G01N1/32 ,  G03C5/00 ,  G03F9/00 ,  G21G5/00 ,  H01J37/30

CPC classification number: H01J37/317 ,  G01N1/32 ,  H01J37/244 ,  H01J37/3005 ,  H01J2237/2814 ,  H01J2237/3174 ,  H01J2237/31745

Abstract: Methods and systems for measuring a characteristic of a substrate (90) or preparing a substrate (90) for analysis are provided. One method for measuring a characteristic of a substrate (90) includes removing a portion of a feature on the substrate (90) using an electron beam (110) to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate (90) for analysis includes removing a portion of a material on the substrate (90) proximate to a defect using chemical etching (88) in combination with an electron beam (110). The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate (90) for analysis includes removing a portion of a material on a substrate (90) proximate to a defect using chemical etching (88) in combination with an electron beam (110) and a light beam.

Abstract translation: 提供了用于测量基板（90）的特性或准备用于分析的基板（90）的方法和系统。 用于测量衬底（90）的特性的一种方法包括使用电子束（110）去除衬底（90）上的特征的一部分以暴露特征的剩余部分的横截面轮廓。 该特征可以是光致抗蚀剂特征。 该方法还包括测量横截面轮廓的特性。 制备用于分析的基板（90）的方法包括使用化学蚀刻（88）与电子束（110）组合地去除靠近缺陷的基板（90）上的材料的一部分。 缺陷可能是地下缺陷或部分地下缺陷。 制备用于分析的衬底（90）的另一种方法包括使用化学蚀刻（88）与电子束（110）和光束组合，去除邻近缺陷的衬底（90）上的材料的一部分。

公开(公告)号：DE112005000660T5

公开(公告)日：2007-02-08

申请号：DE112005000660

申请日：2005-03-22

Applicant: KLA TENCOR TECH CORP

Inventor： NASSER-GHODSI MEHRAN ,  BAKKER DAVE ,  BOROWICZ MARK ,  VAEZ-IRAVANI MEHDI ,  AJI PRASHANT ,  GARCIA RUDY F ,  CHUANG TZU CHIN

IPC: G01N1/28 ,  A61N5/00 ,  G01N1/32 ,  G01N1/44 ,  G01N13/10 ,  G03C5/00 ,  G03F9/00 ,  G21G5/00 ,  H01J37/30

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.