Abstract:
PROBLEM TO BE SOLVED: To provide a system and method for inspecting the surface of a specimen such as a semiconductor wafer. SOLUTION: The system contains a lighting system wherein a 1st light beam is directed at the specimen surface at a slant angle of incidence and a 2nd light beam is directed at the same with a virtually vertical angle of incidence, a collecting system for collecting at east a part of the beams reflected from the specimen surface, and a detection system wherein the collected part of the reflected beams are processed. Defects if any in presence on the specimen are detected in the collected part of the 1st and 2nd beams.
Abstract:
Pixel intensities indicative of scattered radiation from portions of the inspected surface surrounding a location of a potential anomaly are also stored so that such data is available for quick review of the pixel intensities within a patch on the surface containing the location of the potential anomaly. Where rotational motion is caused between the illumination beam and the inspected surface, signal-to-noise ratio may be improved by comparing the pixel intensities of pixels at corresponding positions on two different surfaces that are inspected, where corresponding pixels at the same relative locations on the two different surfaces are illuminated and scattered radiation therefrom collected and detected under the same optical conditions.
Abstract:
Pixel intensities indicative of scattered radiation from portions of the inspected surface surrounding a location of a potential anomaly are also stored so that such data is available for quick review of the pixel intensities within a patch on the surface containing the location of the potential anomaly. Where rotational motion is caused between the illumination beam and the inspected surface, signal-to-noise ratio may be improved by comparing the pixel intensities of pixels at corresponding positions on two different surfaces that are inspected, where corresponding pixels at the same relative locations on the two different surfaces are illuminated and scattered radiation therefrom collected and detected under the same optical conditions.
Abstract:
A multi-spot inspection system employs an objective (30) for focusing an array of radiation beams (24) to a surface of an object (28) and a second objective (32) having a large numerical aperture for collecting scattered radiation (64) from the array of illuminated spots. The scattered radiation from each illuminated spot is focused to a corresponding optical fiber channel (34) so that information about a scattering may be conveyed to a corresponding detector in a remote detector array (36) for processing. For patterned surface inspection, a cross-shaped filter (90) is rotated along with the surface to reduce the effects of diffraction by Manhattan geometry. A spatial filter (92) in the shape of an annular aperture may also be employed to reduce scattering from patterns such as arrays on the surface.
Abstract:
Methods and systems for measuring a characteristic of a substrate (90) or preparing a substrate (90) for analysis are provided. One method for measuring a characteristic of a substrate (90) includes removing a portion of a feature on the substrate (90) using an electron beam (110) to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate (90) for analysis includes removing a portion of a material on the substrate (90) proximate to a defect using chemical etching (88) in combination with an electron beam (110). The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate (90) for analysis includes removing a portion of a material on a substrate (90) proximate to a defect using chemical etching (88) in combination with an electron beam (110) and a light beam.
Abstract:
Systems for inspection of patterned and unpatterned wafers are provided. One system includes an illumination system configured to illuminate the specimen. The system also includes a collector configured to collect light scattered from the specimen. In addition, the system includes a segmented detector configured to separately detect different portions of the light such that azimuthal and polar angular information about the different portions of light is preserved. The detector may also be configured to produce signals representative of the different portions of the light. The system may also include a processor configured to detect defects on the specimen from the signals. In another embodiment, the system may include a stage that is configured to rotate and translate the specimen. In one such embodiment, the system may also include an illumination system configured to scan the specimen in a wide scan path during rotation and translation of the specimen.
Abstract:
A compact surface inspection optical head is disclosed which comprises a frame with two rings of apertures (12a, 12b) therein. The first set of apertures (12a) surrounding and close to a normal direction (20') to the surface to be inspected is connected to fibers used to collect scattered radiation useful for the detection of micro-scratches caused by chemical and mechanical polishing. A second ring of apertures (12b) at low elevation angles to the surface inspected is connected to fibers to collect radiation scattered by the surface inspected for anomaly detectoin on patterned surfaces. This ring of apertures (12b) segments azimuthally the collection space so that the signal outputs from detectors that are saturated by the pattern diffraction or scattering may be discarded and only the outputs of unsaturated detectors are used for anomaly detection. A pair of larger apertures (12c) in the double dark field positions may be employed for anomaly detection on unpatterned surfaces.
Abstract:
A cylindrical mirror or lens (12) is used to focus an input collimated beam of light onto a line (20) on the surface to be inspected, where the line is substantially in the plane of incidence of the focused beam. An image of the beam is projected onto an array of CCD (32) parallel to the line for detecting anomalies and/or features of the surface, where the array is outside the plane of incidence of the focused beam. For inspecting surface with a pattern thereon, the light from the surface is first passed through a spatial filter (106) before it is imaged onto the CCD. The spatial filter may be replaced by reflective strips that selectively reflects scattered radiation to the detector, where the reflective strips also shift in synchronism with the relative motion.
Abstract:
Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.