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    METHODS AND SYSTEMS FOR IMPROVED LOCALIZED FEATURE QUANTIFICATION IN SURFACE METROLOGY TOOLS
    3.
    发明申请
    METHODS AND SYSTEMS FOR IMPROVED LOCALIZED FEATURE QUANTIFICATION IN SURFACE METROLOGY TOOLS 审中-公开
    用于改进表面计量学工具中局部化特征量化的方法和系统

    公开(公告)号：WO2012094421A3

    公开(公告)日：2012-10-26

    申请号：PCT/US2012020225

    申请日：2012-01-04

    Applicant: KLA TENCOR CORP ,  CHEN HAIGUANG ,  SINHA JAYDEEP ,  TANG SHUOHONG ,  HAGER JOHN ,  ZENG ANDREW ,  KAMENSKY SERGEY

    Inventor： CHEN HAIGUANG ,  SINHA JAYDEEP ,  TANG SHUOHONG ,  HAGER JOHN ,  ZENG ANDREW ,  KAMENSKY SERGEY

    IPC: H01L21/66

    CPC classification number: G06T5/002 ,  G06T5/20 ,  G06T7/0004 ,  G06T2207/30148

    Abstract: A method for enabling more accurate measurements of localized features on wafers is disclosed. The method includes: a) performing high order surface fitting to more effectively remove the low frequency shape components and also to reduce possible signal attenuations commonly observed from filtering; b) constructing and applying a proper two dimensional LFM window to the residual image from the surface fitting processing stage to effectively reduce the residual artifacts at the region boundaries; c) calculating the metrics of the region using the artifact-reduced image to obtain more accurate and reliable measurements; and d) using site-based metrics obtained from front and back surface data to quantify the features of interest. A method for filtering data from measurements of localized features on wafers is disclosed. This method includes an algorithm designed to adjust the filtering behavior according to the statistics of extreme data samples. A method for utilizing the 2D window and the data filtering to yield a more robust and more accurate Localized Feature quantification methodology is disclosed.

    Abstract translation: 公开了一种用于实现对晶片上的局部化特征的更准确测量的方法。 该方法包括：a）执行高阶表面拟合以更有效地去除低频形状分量并且还减少通常从滤波观察到的可能的信号衰减; b）对来自表面拟合处理阶段的残差图像构建和应用适当的二维LFM窗口，以有效减少区域边界处的残留伪影; c）使用伪像减少的图像计算区域的度量以获得更准确和可靠的测量; 和d）使用从正面和背面数据获得的基于场地的度量来量化感兴趣的特征。 公开了一种用于从晶片上的局部特征的测量中过滤数据的方法。 该方法包括一个算法，设计用于根据极端数据样本的统计数据调整过滤行为。 公开了一种用于利用2D窗口和数据过滤来产生更健壮和更准确的局部特征量化方法的方法。

    PATTERNED WAFER GEOMETRY MEASUREMENTS FOR SEMICONDUCTOR PROCESS CONTROLS
    4.
    发明公开
    PATTERNED WAFER GEOMETRY MEASUREMENTS FOR SEMICONDUCTOR PROCESS CONTROLS 审中-公开

    公开(公告)号：EP3117454A4

    公开(公告)日：2017-10-18

    申请号：EP15811731

    申请日：2015-04-23

    Applicant: KLA-TENCOR CORP

    Inventor： VUKKADALA PRADEEP ,  SINHA JAYDEEP

    IPC: H01L21/66

    CPC classification number: H01L22/12 ,  H01L22/20

    Abstract: Wafer geometry measurement tools and methods for providing improved wafer geometry measurements are disclosed. Wafer front side, backside and flatness measurements are taken into consideration for semiconductor process control. The measurement tools and methods in accordance with embodiments of the present disclosure are suitable for handling any types of wafers, including patterned wafers, without the shortcomings of conventional metrology systems.

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