公开(公告)号：WO2018013998A1

公开(公告)日：2018-01-18

申请号：PCT/US2017/042257

申请日：2017-07-14

Applicant: KLA-TENCOR CORPORATION

Inventor： BIAFORE, John J. ,  SMITH, Mark D. ,  GRAVES, Trey (John) S. ,  BLANKENSHIP, David A. ,  VAGLIO PRET, Alessandro

IPC: G03F7/20 ,  G03F7/00

Abstract: In some embodiments, a method may include improving a development process of a photoresist. The method may include simulating a negative-tone development process of a photoresist. The method may include determining a reaction of a developer with a soluble photoresist surface. Determining the reaction of the developer may include applying a reaction rate constant at a power of a reaction order to a blocked polymer concentration to yield a resist dissolution rate of soluble resist comprising the dissolution-limited regime of development. The method may include determining a flux of the developer into exposed and partially soluble resist. Determining the flux of the developer may include applying a vector valued diffusion coefficient of the developer dependent upon the blocked polymer concentration to a gradient of developer concentration to an expansion rate of insoluble resist comprising the expansion-controlled regime of development. The method may include optimizing an illumination source and a mask on a full chip.

Abstract translation: 在一些实施例中，一种方法可以包括改进光致抗蚀剂的显影过程。 该方法可以包括模拟光刻胶的负色显影过程。 该方法可以包括确定显影剂与可溶光刻胶表面的反应。 确定显影剂的反应可以包括以反应顺序的功率对封端的聚合物浓度施加反应速率常数，以产生可溶性抗蚀剂的抗蚀剂溶解速率，其包括限制溶解的显影方式。 该方法可以包括确定显影剂向暴露的和部分可溶的抗蚀剂的通量。 确定显影剂的通量可以包括将取决于封端的聚合物浓度的显影剂的矢量值扩散系数应用于显影剂浓度相对于包含膨胀控制显影方式的不溶性抗蚀剂的膨胀率的梯度。 该方法可以包括优化全芯片上的照明源和掩模。

公开(公告)号：EP3465349A1

公开(公告)日：2019-04-10

申请号：EP17828585.4

申请日：2017-07-14

Applicant: Kla-Tencor Corporation

Inventor： BIAFORE, John J. ,  SMITH, Mark D. ,  GRAVES, Trey (John) S. ,  BLANKENSHIP, David A. ,  VAGLIO PRET, Alessandro

IPC: G03F7/20 ,  G03F7/00