公开(公告)号：WO2016010776A1

公开(公告)日：2016-01-21

申请号：PCT/US2015/039437

申请日：2015-07-07

Applicant: KLA-TENCOR CORPORATION

Inventor： KANDEL, Daniel ,  SMITH, Mark. D ,  WAGNER, Mark ,  AMIT, Eran ,  LEE, Myungjun

IPC: H01L21/66

CPC classification number: G06F17/5081 ,  G01N21/93 ,  G01N21/956 ,  G01N2201/13 ,  G06F2217/12 ,  H01L22/12 ,  H01L22/30 ,  Y02P80/30

Abstract: Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.

Abstract translation: 提供了测量方法，其包括在设备设计中识别重叠关键模式，所述重叠关键模式对于依赖于设计规范的指定阈值以上的过程变化具有重叠灵敏度; 并使用与所识别的重叠关键模式相对应的度量目标。 或者或补充地，计量方法包括根据由于指定的过程变化而变窄的对应过程窗口来识别产量关键模式，其中，所述变窄由所述模式的边缘放置误差（EPE）对过程参数的依赖性来定义。 提供相应的目标和测量。