Methods and Systems for Determining a Critical Dimension and Overlay of a Specimen
    1.
    发明申请
    Methods and Systems for Determining a Critical Dimension and Overlay of a Specimen 审中-公开
    用于确定样品的临界尺寸和覆盖层的方法和系统

    公开(公告)号:US20130314710A1

    公开(公告)日:2013-11-28

    申请号:US13959621

    申请日:2013-08-05

    Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

    Abstract translation: 提供了用于监测半导体制造工艺的方法和系统。 系统可以包括被配置为支撑样本并耦合到测量装置的台。 测量装置可以包括照明系统和检测系统。 照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。 例如,系统可以被配置为确定样本的多个属性,包括但不限于临界尺寸和重叠错位; 缺陷和薄膜特性; 临界尺寸和缺陷; 临界尺寸和薄膜特性; 临界尺寸,薄膜特性和缺陷; 宏观缺陷和微缺陷; 平整度,薄膜特性和缺陷; 重叠错位和平整度; 植入物特征和缺陷; 附着力和厚度。 以这种方式,测量装置可以执行多个光学和/或非光学测量和/或检查技术。

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