公开(公告)号：WO2004076969A1

公开(公告)日：2004-09-10

申请号：PCT/US2004/000349

申请日：2004-01-07

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： KRISHNAN, Shankar

IPC: G01B11/06

CPC classification number: G01J4/00 ,  G01B11/06 ,  G01B11/065

Abstract: A system for performing single wavelength ellipsometry (SWE) on a thin film on a multi-layer substrate such as silicon-on-insulator (SOI) applies a measurement beam having an absorption distance less than the thickness of the superficial layer of the multi-layer substrate. For example, for an SOI substrate, the measurement beam is selected to have a wavelength that results in an absorption distance that is less than the superficial silicon layer thickness. The system can include a cleaning laser to provide concurrent cleaning to enhance measurement accuracy without negatively impacting throughput. The measurement beam source can be configured to provide a measurement beam at one wavelength and a cleaning beam at a longer wavelength, so that the absorption depth of the measurement beam is less than the superficial layer thickness while the absorption depth of the cleaning beam is greater than the superficial layer thickness.

Abstract translation: 在诸如绝缘体上硅（SOI）的多层基板上的薄膜上执行单波长椭偏仪（SWE）的系统应用具有小于多层膜的表层的厚度的吸收距离的测量光束， 层基板。 例如，对于SOI衬底，测量光束被选择为具有导致小于表面硅层厚度的吸收距离的波长。 该系统可以包括清洁激光器以提供同时清洁以提高测量精度，而不会不利地影响生产量。 测量光束源可以被配置成在一个波长处提供测量光束并且在较长波长处提供清洁光束，使得测量光束的吸收深度小于表面层厚度，而清洁光束的吸收深度更大 比表面层厚度。

公开(公告)号：WO2006133258A2

公开(公告)日：2006-12-14

申请号：PCT/US2006/022059

申请日：2006-06-06

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  KANDEL, Daniel ,  GROSS, Ken ,  FRIEDMANN, Michael ,  FU, Jiyou ,  KRISHNAN, Shankar ,  GOLOVANEVSKY, Boris

Inventor： KANDEL, Daniel ,  GROSS, Ken ,  FRIEDMANN, Michael ,  FU, Jiyou ,  KRISHNAN, Shankar ,  GOLOVANEVSKY, Boris

IPC: G01J4/00

CPC classification number: G01N21/211 ,  G01N21/9501 ,  G01N21/956 ,  G03F7/70633

Abstract: Systems and methods are disclosed for using ellipsometer configurations to measure the partial Mueller matrix and the complete Jones matrix of a system that may be isotropic or anisotropic. In one embodiment two or more signals, which do not necessarily satisfy any symmetry assumptions individually, are combined into a composite signal which satisfies a symmetry assumption. The individual signals are collected at two or more analyzer angles. Symmetry properties of the composite signals allow easy extraction of overlay information for any relative orientation of the incident light beam with respect to a 1D grating target, as well as for targets comprising general 2D gratings. Signals of a certain symmetry property also allow measurement of profile asymmetry in a very efficient manner. In another embodiment a measurement methodology is defined to measure only signals which satisfy a symmetry assumption. An optional embodiment comprises a single polarization element serving as polarizer and analyzer. Another optional embodiment uses an analyzing prism to simultaneously collect two polarization components of reflected light.

Abstract translation: 公开了使用椭偏仪配置来测量可能是各向同性或各向异性的系统的部分Mueller矩阵和完整琼斯矩阵的系统和方法。 在一个实施例中，不一定满足任何对称假设的两个或更多个信号被组合成满足对称假设的复合信号。 各个信号以两个或更多个分析器角度收集。 复合信号的对称属性允许容易地提取用于入射光束相对于1D光栅靶的任何相对取向以及包括通用2D光栅的目标的覆盖信息。 具有某种对称性质的信号也可以以非常有效的方式测量轮廓不对称。 在另一个实施例中，测量方法被定义为仅测量满足对称假设的信号。 可选实施例包括用作偏振器和分析器的单个偏振元件。 另一个可选实施例使用分析棱镜来同时收集反射光的两个偏振分量。

公开(公告)号：EP1896811A2

公开(公告)日：2008-03-12

申请号：EP06772390.8

申请日：2006-06-06

Applicant: KLA-Tencor Technologies Corporation

Inventor： KANDEL, Daniel ,  GROSS, Ken ,  FRIEDMANN, Michael ,  FU, Jiyou ,  KRISHNAN, Shankar ,  GOLOVANEVSKY, Boris

IPC: G01J4/00

CPC classification number: G01N21/211 ,  G01N21/9501 ,  G01N21/956 ,  G03F7/70633

Abstract: Systems and methods are disclosed for using ellipsometer configurations to measure the partial Mueller matrix and the complete Jones matrix of a system that may be isotropic or anisotropic. In one embodiment two or more signals, which do not necessarily satisfy any symmetry assumptions individually, are combined into a composite signal which satisfies a symmetry assumption. The individual signals are collected at two or more analyzer angles. Symmetry properties of the composite signals allow easy extraction of overlay information for any relative orientation of the incident light beam with respect to a ID grating target, as well as for targets comprising general 2D gratings. Signals of a certain symmetry property also allow measurement of profile asymmetry in a very efficient manner. In another embodiment a measurement methodology is defined to measure only signals which satisfy a symmetry assumption. An optional embodiment comprises a single polarization element serving as polarizer (111) and analyzer (115). Another optional embodiment uses an analyzing prism (144) to simultaneously collect two polarization components of reflected light.