Abstract:
All-reflective optical systems for broadband wafer inspection are provided. One system configured to inspect a wafer includes an optical subsystem. All light-directing components of the optical subsystem are reflective optical components except for one or more refractive optical components, which are located only in substantially collimated space. The refractive optical component(s) may include, for example, a refractive beamsplitter element that can be used to separate illumination and collection pupils. The optical subsystem may also include one or more reflective optical components located in substantially collimated space. The optical subsystem is configured for inspection of the wafer across a waveband of greater than 20 nm. In some embodiments, the optical subsystem is configured for inspection of the wafer at wavelengths less than and greater than 200 nm.
Abstract:
Techniques for utilizing a microscope inspection system (100) capable of inspecting specimens (112) at high throughput rates are described. The inspection system achieves the higher throughput rates by utilizing more than one detector array (116) and a large field of view to scan the surface of the semiconductor wafers. The microscope inspection system also has high magnification capabilities, a high numerical aperture, and a large field of view. By using more than one detector array, more surface area of a wafer can be inspected during each scanning swath across the semiconductor wafers. The microscope inspection system is configured to have a larger field of view so that the multiple detector arrays can be properly utilized. Additionally, special arrangements of reflective and/or refractive surfaces are used in order to fit the detector arrays within the physical constraints of the inspection system.
Abstract:
A surface inspection apparatus and method are disclosed. In particular, the method and apparatus are capable of inspecting a surface in two (or more) optical regimes thereby enhancing the defect detection properties of such method and apparatus. A method involves illuminating the surface with light in a first wavelength range and a second wavelength range. The first wavelength range selected so that the surface is opaque to the light of the first wavelength range so that a resultant optical signal is produced that is predominated by diffractive and scattering properties of the surface. The second wavelength range is selected so that the surface is at least partially transmissive to light in the second wavelength range so that another resultant optical signal is produced that is predominated by thin film optical properties of the surface. The resultant optical signals are detected and processed to detect defects in the surface. Devices for implementing such methods are also disclosed.
Abstract:
The present invention pertains to techniques for increasing the available illumination light, increasing the resolution, and optimizing the spectrum of optical inspection systems (100). These techniques involve combining the light beams (116) from two or more separate illumination sources (104, 114). In one embodiment, this performed by utilizing two separate illumination sources (104, 114 )one of the illumination sources compensates the other illumination source in the wavelength range where illumination light intensity is low. Specifically, this can be performed by utilizing a broadband illumination source (114) and a narrowband illumination source (104) combined with dichroic beamsplitters (106).
Abstract:
Techniques for utilizing a microscope inspection system capable of inspecting specimens at high throughput rates are described. The inspection system achieves the higher throughput rates by utilizing more than one detector array and a large field of view to scan the surface of the semiconductor wafers. The microscope inspection system also has high magnification capabilities, a high numerical aperture, and a large field of view. By using more than one detector array, more surface area of a wafer can be inspected during each scanning swath across the semiconductor wafers. The microscope inspection system is configured to have a larger field of view so that the multiple detector arrays can be properly utilized. Additionally, special arrangements of reflective and/or refractive surfaces are used in order to fit the detector arrays within the physical constraints of the inspection system.
Abstract:
Techniques for utilizing a microscope inspection system (100) capable of inspecting specimens (112) at high throughput rates are described. The inspection system achieves the higher throughput rates by utilizing more than one detector array (116) and a large field of view to scan the surface of the semiconductor wafers. The microscope inspection system also has high magnification capabilities, a high numerical aperture, and a large field of view. By using more than one detector array, more surface area of a wafer can be inspected during each scanning swath across the semiconductor wafers. The microscope inspection system is configured to have a larger field of view so that the multiple detector arrays can be properly utilized. Additionally, special arrangements of reflective and/or refractive surfaces are used in order to fit the detector arrays within the physical constraints of the inspection system.
Abstract:
All-reflective optical systems for broadband wafer inspection are provided. One system configured to inspect a wafer includes an optical subsystem. All light-directing components of the optical subsystem are reflective optical components except for one or more refractive optical components, which are located only in substantially collimated space. The refractive optical component(s) may include, for example, a refractive beamsplitter element that can be used to separate illumination and collection pupils. The optical subsystem may also include one or more reflective optical components located in substantially collimated space. The optical subsystem is configured for inspection of the wafer across a waveband of greater than 20 nm. In some embodiments, the optical subsystem is configured for inspection of the wafer at wavelengths less than and greater than 200 nm.