公开(公告)号：WO2008003084A2

公开(公告)日：2008-01-03

申请号：PCT/US2007/072515

申请日：2007-06-29

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  VERMA, Gaurav ,  SU, Bo ,  VOLK, William ,  LEHON, Harold ,  HESS, Carl

Inventor： VERMA, Gaurav ,  SU, Bo ,  VOLK, William ,  LEHON, Harold ,  HESS, Carl

IPC: G06F19/00

CPC classification number: G03F1/84

Abstract: Computer-implemented methods and systems for determining different process windows for a wafer printing process for different reticle designs are provided. One method includes generating simulated images illustrating how each of the different reticle designs will be printed on a wafer at different values of one or more parameters of the wafer printing process. The method also includes detecting defects in each of the different reticle designs using the simulated images. In addition, the method includes determining a process window for the wafer printing process for each of the different reticle designs based on results of the detecting step.

Abstract translation: 提供了用于确定用于不同掩模版设计的晶片印刷工艺的不同工艺窗口的计算机实现的方法和系统。 一种方法包括产生模拟图像，其示出了在晶片印刷过程的一个或多个参数的不同值下每个不同的标线设计将如何印刷在晶片上。 该方法还包括使用模拟图像检测每个不同标线设计中的缺陷。 此外，该方法包括基于检测步骤的结果确定用于每个不同掩模版设计的晶片印刷处理的处理窗口。

公开(公告)号：WO2003034492A3

公开(公告)日：2003-04-24

申请号：PCT/US2002/033154

申请日：2002-10-16

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： WEINER, Kurt, H. ,  VERMA, Gaurav

IPC: H01L23/58

Abstract: An improved voltage contrast test structure (100, 200, 250, 300) is disclosed. In general terms, the test structure can be fabricated in a single photolithography step or with a single reticle or mask. The test structure includes substructures (102, 104, 202, 204, 252, 254, 302, 304) which are designed to have a particular voltage potential pattern during a voltage contrast inspection. For example, when an electron beam is scanned across the test structure, an expected pattern of intensities are produced and imaged as a result of the expected voltage potentials of the test structure. However, when there is an unexpected pattern of voltage potentials present during the voltage contrast inspection, this indicates that a defect is present within the test structure. To produce different voltage potentials, a first set of substructures (102, 202, 252, 302) are coupled to a relatively large conductive structure (110, 210, 260, 302, 308), such as a large conductive pad, so that the first set of substructures charges more slowly than a second set of substructures that are not coupled to the relatively large conductive structure. Mechanisms for fabricating such a test structure are also disclosed. Additionally, searching mechanisms for quickly locating defects within such a test structure, as well as other types of voltage contrast structures, during a voltage contrast inspection are also provided.