公开(公告)号：US20040130718A1

公开(公告)日：2004-07-08

申请号：US10339518

申请日：2003-01-08

Applicant: KLA-Tencor Technologies Corporation

Inventor： Shankar Krishnan

IPC: G01J004/00

CPC classification number: G01J4/00 ,  G01B11/06 ,  G01B11/065

Abstract: A system for performing single wavelength ellipsometry (SWE) on a thin film on a multi-layer substrate such as silicon-on-insulator (SOI) applies a measurement beam having an absorption distance less than the thickness of the superficial layer of the multi-layer substrate. For example, for an SOI substrate, the measurement beam is selected to have a wavelength that results in an absorption distance that is less than the superficial silicon layer thickness. The system can include a cleaning laser to provide concurrent cleaning to enhance measurement accuracy without negatively impacting throughput. The measurement beam source can be configured to provide a measurement beam at one wavelength and a cleaning beam at a longer wavelength, so that the absorption depth of the measurement beam is less than the superficial layer thickness while the absorption depth of the cleaning beam is greater than the superficial layer thickness.

Abstract translation: 在诸如绝缘体上硅（SOI）的多层基板上的薄膜上执行单波长椭偏仪（SWE）的系统应用具有小于多层膜的表层的厚度的吸收距离的测量光束， 层基板。 例如，对于SOI衬底，测量光束被选择为具有导致小于表面硅层厚度的吸收距离的波长。 该系统可以包括清洁激光器以提供同时清洁以提高测量精度，而不会不利地影响生产量。 测量光束源可以被配置为提供一个波长的测量光束和较长波长的清洁光束，使得测量光束的吸收深度小于表面层厚度，而清洁光束的吸收深度更大 比表面层厚度。