公开(公告)号：JPS6331743B2

公开(公告)日：1988-06-27

申请号：JP7867682

申请日：1982-05-11

Applicant: KOGYO GIJUTSUIN

Inventor： TOMIMASU TAKIO

IPC: G01R1/28 ,  H05H13/04

公开(公告)号：JPS5233579A

公开(公告)日：1977-03-14

申请号：JP10855675

申请日：1975-09-09

Applicant: KOGYO GIJUTSUIN

Inventor： TOMIMASU TAKIO ,  CHIWAKI MITSUKUNI

IPC: G01T1/11

Abstract: PURPOSE:Measurement of radiation dose having satisfactory linearity and high level is performed by the use of a thermofluorescence dose measuring element.

公开(公告)号：JPS51139385A

公开(公告)日：1976-12-01

申请号：JP6308075

申请日：1975-05-28

Applicant: KOGYO GIJUTSUIN

Inventor： TOMIMASU TAKIO ,  YAMAZAKI TETSUO ,  CHIWAKI MITSUKUNI

IPC: G01T1/02 ,  G01T1/16 ,  G01T1/24 ,  H01L31/00 ,  H01L31/09

Abstract: PURPOSE:To messure the quantity of radioactive rays from the change of oscillating frequencies of junction-type field-effect transistors to which are irradiated radioactive rays.

公开(公告)号：JPS51387A

公开(公告)日：1976-01-06

申请号：JP6968774

申请日：1974-06-20

Applicant: KOGYO GIJUTSUIN

Inventor： TOMIMASU TAKIO ,  SANKAKU TOMOHISA ,  YAMAZAKI TETSUO ,  SUGYAMA TAKU

IPC: G01T1/24 ,  G01T1/02 ,  G01T1/29 ,  H01L31/09

公开(公告)号：JPS6070700A

公开(公告)日：1985-04-22

申请号：JP17898483

申请日：1983-09-27

Applicant: KOGYO GIJUTSUIN

Inventor： TOMIMASU TAKIO ,  NOGUCHI TSUTOMU ,  SUGIYAMA TAKU

IPC: H05H15/00 ,  H05H13/04

公开(公告)号：JPS55151300A

公开(公告)日：1980-11-25

申请号：JP5917279

申请日：1979-05-16

Applicant: KOGYO GIJUTSUIN

Inventor： TOMIMASU TAKIO

IPC: H01J37/141 ,  G21K1/00 ,  G21K1/093 ,  H01J3/10 ,  H01J37/10 ,  H05H7/00 ,  H05H7/04

公开(公告)号：JPS5320376A

公开(公告)日：1978-02-24

申请号：JP9451576

申请日：1976-08-10

Applicant: KOGYO GIJUTSUIN

Inventor： TOMIMASU TAKIO

IPC: G01T1/24 ,  G01T1/02 ,  G01T1/16

Abstract: PURPOSE:To achieve the enlargement of a measuring range by usuing a P-N junction type diode PNJD of a controlled impurity concentration.

公开(公告)号：JPS52143087A

公开(公告)日：1977-11-29

申请号：JP5912976

申请日：1976-05-24

Applicant: KOGYO GIJUTSUIN

Inventor： TOMIMASU TAKIO

IPC: G01T1/24 ,  G01T1/02 ,  G01T1/16

Abstract: PURPOSE:To make it possible to measure high-level, large-dose radiant rays at over 10 ratio through a miniaturized element having humidity-resistant property by using the radiation effect of a sealing-type FET(J-FET).

公开(公告)号：JPH0415916B2

公开(公告)日：1992-03-19

申请号：JP20534983

申请日：1983-11-01

Applicant: KOGYO GIJUTSUIN

Inventor： TOMIMASU TAKIO ,  MISUMI TOMOHISA ,  YAMAZAKI TETSUO

IPC: G01T1/29 ,  G01T1/12 ,  G01T3/04

公开(公告)号：JPS6211452B2

公开(公告)日：1987-03-12

申请号：JP5917279

申请日：1979-05-16

Applicant: KOGYO GIJUTSUIN

Inventor： TOMIMASU TAKIO

IPC: H01J37/141 ,  G21K1/00 ,  G21K1/093 ,  H01J3/10 ,  H01J37/10 ,  H05H7/00 ,  H05H7/04