公开(公告)号：EP0222404A1

公开(公告)日：1987-05-20

申请号：EP86115801.2

申请日：1986-11-13

Applicant: KOLLMORGEN TECHNOLOGIES CORPORATION

Inventor： Allred, Worth P.

IPC: C30B11/00 ,  C30B35/00

CPC classification number: C30B11/002

Abstract: A modified "Horizontal Bridgman" process for growing undoped compound single crystals, preferably GaAs crystals, is claimed. The crystal is grown in a boat (305) consisting of pyrolytic boron nitride covered with a layer of powdered B₂O₃ (310) or boric acid, thus achieving single crystals with less than 3000 dis­locations or etch pits per cm² and a resistivity of 10⁸ ohm-cm or more, and a resistivity after conversion degradation of not less than 5 × 10⁶ ohm-cm. In addition, the presence of a small amount of oxygen (340) for combining with silicon reduces silicon contamination of the formed GaAs crystals.

Abstract translation: 要求保护用于生长未掺杂化合物单晶，优选GaAs晶体的改进的“水平布里奇曼”方法。 将晶体生长在由热解氮化硼组成的船（305）中，该热解氮化硼覆盖有一层粉末状的B2O3（310）或硼酸，从而获得具有小于3000个位错或每厘米2的蚀刻坑的单晶，并且电阻率 10 8Ω·cm以上，转化后的电阻率降低至5×10 -6 ohm-cm以上。 此外，与硅结合的少量氧（340）的存在降低了所形成的GaAs晶体的硅污染。