公开(公告)号：KR20120006237A

公开(公告)日：2012-01-18

申请号：KR20100066862

申请日：2010-07-12

Applicant: KOREA ELECTRONICS TECHNOLOGY

Inventor： HA MIN WOO ,  ROH CHEONG HYUN ,  HAHN CHEOL KOO ,  LEE JUN HO ,  CHOI HONG GOO ,  SONG HONG JOO

IPC: H01L21/683 ,  H01L21/20

Abstract: PURPOSE: A substrate holder for a molecular beam epitaxy apparatus is provided to reduce unevenness of a thermal expansion coefficient and processing temperature of a substrate, thereby minimizing crack generation within the substrate in a high temperature heating process. CONSTITUTION: A substrate holder(10') is formed into a tube shape which is opened in up and down directions. A protrusion(11) is arranged along the circumference in the inner surface of the substrate holder in order to horizontally mount an epitaxy target substrate(D). A plurality of supporting projections(12) is arranged in the upper surface of the protrusion in order to separate the substrate from the protrusion. A step shape groove is arranged in the inner upper part of the substrate holder. The substrate holder is manufactured with pure molybdenum or molybdenum alloy.

Abstract translation: 目的：提供用于分子束外延装置的基板保持器，以减少基板的热膨胀系数和处理温度的不均匀性，从而使在高温加热过程中的基板内的裂纹产生最小化。 构成：衬底保持器（10'）形成为在上下方向打开的管状。 在基板保持器的内表面中沿着圆周布置突起（11），以水平安装外延目标基板（D）。 在突起的上表面中布置有多个支撑突起（12），以将基板与突起分离。 在基板支架的内部上部配置有阶梯形槽。 衬底保持器由纯钼或钼合金制成。

公开(公告)号：KR101121588B1

公开(公告)日：2012-03-06

申请号：KR20100134382

申请日：2010-12-24

Applicant: KOREA ELECTRONICS TECHNOLOGY

Inventor： SONG HONG JOO ,  CHOI HONG GOO ,  ROH CHEONG HYUN ,  HAHN CHEOL KOO ,  LEE JUN HO ,  HA MIN WOO

IPC: H01L21/20

Abstract: PURPOSE: A growth method of GaN on an SI by modulating a source flux are provided to grow a second GaN layer without a crack by inserting an AlGaN layer between an AlN buffer layer and a first GaN layer as a buffer layer. CONSTITUTION: A metal N compound of an N saturation is deposited in a substrate to form a first metal N compound layer. The metal N compound is deposited in the first metal N compound layer to form a second metal N compound layer. A GaN of N saturation is deposited on a second metal N compound layer to form a first GaN layer. A GaN of Ga saturation is deposited in the first GaN layer to form a second GaN layer.

Abstract translation: 目的：提供通过调制源极通量的SI在SI上的生长方法，以通过在AlN缓冲层和第一GaN层之间插入AlGaN层作为缓冲层来生长具有裂纹的第二GaN层。 构成：将N饱和的金属N化合物沉积在衬底中以形成第一金属N化合物层。 金属N化合物沉积在第一金属N化合物层中以形成第二金属N化合物层。 将N饱和的GaN沉积在第二金属N化合物层上以形成第一GaN层。 在第一GaN层中沉积Ga饱和的GaN以形成第二GaN层。