公开(公告)号：JPH09270561A

公开(公告)日：1997-10-14

申请号：JP7906096

申请日：1996-04-01

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BIEUNSUU YUU ,  HIYOOFUUN PAAKU ,  HIIIYON CHIYUU ,  MINSUU PAAKU

IPC: H01S5/00 ,  H01S5/042 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a surface light-emitting laser which enables obtaining stable single transverse mode oscillation. SOLUTION: On a part of a semiconductor substrate 1, a laser structure layer 2, 3, 4 having a resonator structure is formed in a direction perpendicular to the surface of the substrate 1. Lateral sides of the laser structure layer 2, 3, 4 are covered with amorphous GaAs layers 7. The laser structure layer is formed by sequentially stacking a lower mirror layer 2, an active layer 3 and an upper mirror layer 4. The active layer 3 is made of an AlGaAs/GaAs multilayer film or an InGaAs/GaAs multilayer film. The amorphous GaAs layer 7 may be formed at a low temperature, and has a higher refractive index and a smaller band gap than a crystalline GaAs layer. Thus, a light is enclosed in the laser structure layer and single transverse mode oscillation is obtained.