公开(公告)号：JPH09181391A

公开(公告)日：1997-07-11

申请号：JP11265696

申请日：1996-05-07

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： HIIIYON CHIYUU ,  BIYUUNSUU YUU ,  HIYOOFUUN PAAKU ,  MINSUU PAAKU

IPC: H01S5/00 ,  H01S5/18 ,  H01S5/183 ,  H01S5/20 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To control the polarizing direction of emitted light easily while sustaining the symmetry of oscillation beam from a vertical resonance surface emission laser diode by etching a resonance layer while inclining in the direction of or . SOLUTION: A lower mirror layer 2, an active layer 3 and an upper mirror layer 4 are formed sequentially on a GaAs substrate 1 and then a conductive metal is deposited and patterned to form an n-type electrode 5 followed by sequential deposition of Au, as an etching substance, by 1000-5000Å and Ni by 500-2000Å. It is then patterned to form a metal mask pattern 6, i.e., an etching mask for underlying part forming substance, and an exposed upper mirror layer 4 and active layer 3 are subjected to reactive ion etching or ion beam etching while inclining by 5-45 in the direction or . According to the method, the polarizing direction can be determined by a simple method without causing significant deviation of the oscillation beam of laser diode from circular symmetry.

公开(公告)号：JPH09270561A

公开(公告)日：1997-10-14

申请号：JP7906096

申请日：1996-04-01

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BIEUNSUU YUU ,  HIYOOFUUN PAAKU ,  HIIIYON CHIYUU ,  MINSUU PAAKU

IPC: H01S5/00 ,  H01S5/042 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a surface light-emitting laser which enables obtaining stable single transverse mode oscillation. SOLUTION: On a part of a semiconductor substrate 1, a laser structure layer 2, 3, 4 having a resonator structure is formed in a direction perpendicular to the surface of the substrate 1. Lateral sides of the laser structure layer 2, 3, 4 are covered with amorphous GaAs layers 7. The laser structure layer is formed by sequentially stacking a lower mirror layer 2, an active layer 3 and an upper mirror layer 4. The active layer 3 is made of an AlGaAs/GaAs multilayer film or an InGaAs/GaAs multilayer film. The amorphous GaAs layer 7 may be formed at a low temperature, and has a higher refractive index and a smaller band gap than a crystalline GaAs layer. Thus, a light is enclosed in the laser structure layer and single transverse mode oscillation is obtained.