公开(公告)号：JPH05343307A

公开(公告)日：1993-12-24

申请号：JP13142191

申请日：1991-06-03

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KUWAN HOO KUON ,  SEON JIN YUN ,  BIYUN SEON PAAKU ,  YON JIN JIEON ,  SAN UON KAN

IPC: H01L21/027 ,  G03F7/26

Abstract: PURPOSE: To increase an etching rate and improve anisotropic etching and a resolution by conducting an RIE dry etching, using O2 /He gas which is O2 gas added with He gas and diluting a sililating agent with air or N2 in a sililation process of a photosensitive film. CONSTITUTION: The upper surface of a substrate 1 is coated with a plasma mask photosensitive film 2, including a pigment, and then a plasma mask photosensitive film 2 is exposed to light. In order to increase sililation selectivity between an exposed section 3 and a non-exposed section 4, presililation baking is conduced. Next, a sililation agent diffused layer 5 is formed in the steam, dilluted with air or N2 gas. Then, He which is an inactive gas is added in O2 gas, and dry etching is conducted to eliminate the non-exposed section 4 of the plasma mask 2. By this method, a rapid etching rate and a superior selectivity can be obtained, and resolution and contrast curve gamma can be enhanced, thereby obtaining, a superior lithography characteristic.