公开(公告)号：JPH05136017A

公开(公告)日：1993-06-01

申请号：JP12345692

申请日：1992-05-15

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SAN UON KAN ,  KIYON SOO RII

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/76 ,  H01L21/8252 ,  H01L29/84

Abstract: PURPOSE: To reduce interface stress that is generated between substrates, due to the difference in thermal coefficient of expansion at the time of heat treatment by forming a plurality of grooves vertically and horizontally, forming a second low-temperature silicon oxide film at the sidewall of the grooves, and performing the adhesion thermal treatment to a single-crystal silicon for a polycrystalline silicon film. CONSTITUTION: A compound semiconductor layer 2 and a compound semiconductor layer 3 for forming an element are subjected to epitaxial growth on a compound semiconductor substrate 1. A low-temperature silicon oxide film 4 and a polycrystalline silicon oxide film 5 are successively laminated on the compound semiconductor layer 3 for forming an element, and a groove 6 reaching the compound semiconductor substrate 1 is formed vertically and horizontally. The sidewall of the groove 6 is covered with a low-temperature silicon oxide film 7a, and adhesion heat treatment is performed to the polycrystalline silicon film 5 and a single-crystal silicon substrate 8. In this case, a space formed inside the groove absorbs a stress that is generated, due to the difference in thermal coefficients of expansion between the compound semiconductor substrate the compound semiconductor layer, and the single-crystal silicon substrate.

公开(公告)号：JPH05343307A

公开(公告)日：1993-12-24

申请号：JP13142191

申请日：1991-06-03

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KUWAN HOO KUON ,  SEON JIN YUN ,  BIYUN SEON PAAKU ,  YON JIN JIEON ,  SAN UON KAN

IPC: H01L21/027 ,  G03F7/26

Abstract: PURPOSE: To increase an etching rate and improve anisotropic etching and a resolution by conducting an RIE dry etching, using O2 /He gas which is O2 gas added with He gas and diluting a sililating agent with air or N2 in a sililation process of a photosensitive film. CONSTITUTION: The upper surface of a substrate 1 is coated with a plasma mask photosensitive film 2, including a pigment, and then a plasma mask photosensitive film 2 is exposed to light. In order to increase sililation selectivity between an exposed section 3 and a non-exposed section 4, presililation baking is conduced. Next, a sililation agent diffused layer 5 is formed in the steam, dilluted with air or N2 gas. Then, He which is an inactive gas is added in O2 gas, and dry etching is conducted to eliminate the non-exposed section 4 of the plasma mask 2. By this method, a rapid etching rate and a superior selectivity can be obtained, and resolution and contrast curve gamma can be enhanced, thereby obtaining, a superior lithography characteristic.