公开(公告)号：JPH09148269A

公开(公告)日：1997-06-06

申请号：JP17667296

申请日：1996-07-05

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JIEONUTSUKU YAN ,  YUNGII OO ,  BIYUNSON PAAKU ,  CHIYURUSON PAAKU ,  KUWANYUI PIYUN

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L29/41 ,  H01L29/812

Abstract: PROBLEM TO BE SOLVED: To provide a method of superimposing a T-shaped gate electrode and low-resistance metal whereby the productivity can be improved with a simple process. SOLUTION: A fine gate-photoresist film 12 is formed on specified part of a semiconductor substrate 11, insulation film 13 and flattening film 14 are formed thereon and etched to expose the film 13, this etched and exposed film 13 is etched and the exposed film 12 is etched. A gate metal 15 is vapor- deposited thereon, the film 14 is removed, and T-shaped gate metal 15 is vapor- deposited. Using this method, the insulation film and flattening film are formed on the semiconductor substrate and fine gate metal, the flattening film is etched back until the insulation film is exposed, the exposed region of the insulation film is etched to expose the reverse-sloped side face of the flattening film and low-resistance metal is vapor-deposited so as to have a directionality and lifted off.