公开(公告)号：JPH0864519A

公开(公告)日：1996-03-08

申请号：JP31386094

申请日：1994-12-16

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BOKU HEIZEN ,  GO YOUKO ,  SAI SOUSHIYU ,  YU KEISHIYUN

IPC: G03F1/20 ,  G03F1/54 ,  G03F1/70 ,  G03F1/80 ,  H01L21/027 ,  H01L21/28 ,  H01L21/338 ,  H01L29/812 ,  G03F1/08

Abstract: PURPOSE: To provide a resist pattern for forming a T-shaped gate and a producing method therefor, with which reproducibility in processes can be secured, and time and costs for forming the gate can be saved. CONSTITUTION: A resist pattern is composed of a transparent mask pattern 1 for forming a pattern at the leg section of electrode on the T-shaped gate and semitransparent mask patterns 3 and 3a for forming the head section of electrode on the T-shaped gate adjacently to that pattern 1. The semitransparent mask pattern is formed from a chrome layer or the like but, when this is formed from the chrome layer, it is formed thinner than the thickness of non-transparent mask patterns 2 and 2a so as to have low light transmissivity.

公开(公告)号：JPS63287801A

公开(公告)日：1988-11-24

申请号：JP10421388

申请日：1988-04-28

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN SHINKON ,  BOKU HEIZEN ,  RO GENFUKU

IPC: G02B5/18 ,  G03C5/00 ,  G03F7/00 ,  G03F7/26