公开(公告)号：JPH08227931A

公开(公告)日：1996-09-03

申请号：JP31680395

申请日：1995-12-05

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI SHIYOUHIYUN ,  YU KEISHIYUN ,  SAI FUEN ,  CHIYOU GENYOKU ,  CHIYOU KIKOU

IPC: B65G49/07 ,  B25J15/08 ,  H01L21/677 ,  H01L21/68 ,  H01L21/687

Abstract: PROBLEM TO BE SOLVED: To eliminate gas leaks between a reactor and tripod by providing a means for gripping the side face of a wafer, wafer carrier including means for detecting the malfunction thereof, and vacuum reactor having a vacuum exhaust hole at the bottom of a wafer chuck. SOLUTION: A gripper of a wafer carrier has a forefinger 110 for holding the side face of a wafer and wafer contacting ends at the tops of both its sides or center end support 102. A support table 100 has an optical sensor 160 for detecting the existence of the light shut-off by an operating lever 113 of the forefinger 110 at a detector of the wafer carrier, thereby detecting the malfunction at operating of the gripper. A tripod at the bottom of a wafer chuck and drive unit are removed, to allow a vacuum exhaust hole and vacuum pump to be located at the bottom of the chuck. This maintains the axial symmetry of a process gas flow which is fed from an upper gas feeder to enhance the process uniformity.

公开(公告)号：JPH08186128A

公开(公告)日：1996-07-16

申请号：JP31538694

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI SHINKI ,  SAI SOUSHIYU ,  IN KIYOUSHIYOU ,  BOKU CHIYURUJIYUN ,  YU KEISHIYUN ,  BOKU KIYOUMO

IPC: H01L21/027 ,  H01L21/336 ,  H01L21/338 ,  H01L29/778 ,  H01L29/78 ,  H01L29/786 ,  H01L29/812

Abstract: PURPOSE: To reduce the resistance and parasitic capacitance of a fine gate by irradiating the upper and lower parts of the gate with an electron beam having different intensity of energy. CONSTITUTION: A two-dimensional electron gas layer 2, an AlGaAs layer 3 and a doped Schottky layer, i.e., a cap layer 4, are formed sequentially on a substrate 1 followed by formation of ohmic layers 5a, 5b. A resist 6 is then applied to the cap layer 4 and heat treated. Subsequently, a second resist 7 is applied onto the first resist 6 and an exposure step is executed using an electron beam having uneven energy. In order to form a T type gate, first and third electron beams 8a, 8c have energy of such intensity as exposing only the second resist 7 while a second electron beam 8b has energy of such intensity the first and second resists 6, 7 can be exposed entirely.

公开(公告)号：JPH0864519A

公开(公告)日：1996-03-08

申请号：JP31386094

申请日：1994-12-16

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BOKU HEIZEN ,  GO YOUKO ,  SAI SOUSHIYU ,  YU KEISHIYUN

IPC: G03F1/20 ,  G03F1/54 ,  G03F1/70 ,  G03F1/80 ,  H01L21/027 ,  H01L21/28 ,  H01L21/338 ,  H01L29/812 ,  G03F1/08

Abstract: PURPOSE: To provide a resist pattern for forming a T-shaped gate and a producing method therefor, with which reproducibility in processes can be secured, and time and costs for forming the gate can be saved. CONSTITUTION: A resist pattern is composed of a transparent mask pattern 1 for forming a pattern at the leg section of electrode on the T-shaped gate and semitransparent mask patterns 3 and 3a for forming the head section of electrode on the T-shaped gate adjacently to that pattern 1. The semitransparent mask pattern is formed from a chrome layer or the like but, when this is formed from the chrome layer, it is formed thinner than the thickness of non-transparent mask patterns 2 and 2a so as to have low light transmissivity.