公开(公告)号：JPH07152052A

公开(公告)日：1995-06-16

申请号：JP21632294

申请日：1994-09-09

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN KOUBAN ,  GO MITSUTATSU ,  BOKU KISEI ,  BOKU SHIYOUDAI

IPC: G02F1/015 ,  G02F1/313

Abstract: PURPOSE: To extremely decrease switching operating currents and to minimize the operating power of an optical switch by maximizing the contact area between front surface electrodes and high-concn. current injecting regions and effectively restraining an injection current. CONSTITUTION: An n-InGaAs cap layer 15 formed on the upper part of a clad layer 13 has groove-shaped etching sections or apertures 25 in such a manner that the current injection area of a reflection surface 102 formed by Zn-diffused regions 18 in the intersected parts of waveguides. The width design of the Zn diffused regions 18 which are the current injection regions is made free by the cap layer 15 having such groove-shaped apertures 25. The contact area of the high-concn. P -InGaAs regions 18 diffused with Zn and the front surface electrodes 16 is made larger on the same plane than the contact area in the case of an ordinary plane, by which ohmic characteristics are improved.