公开(公告)号：JPH09181020A

公开(公告)日：1997-07-11

申请号：JP16418196

申请日：1996-06-25

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JIYONHIYO BAEKU ,  BUN RII ,  SONUU CHIYOI ,  JINHON RII

IPC: H01L21/302 ,  G01B11/06 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a method of real-time detection of completion of removal of oxide layer existing on the surface of a semiconductor device by the thermal etching process. SOLUTION: In the method of real-time detection of completion of separation of an oxide layer of the present invention, when an oxide layer on the substrate surface having a difference of refraction coefficient from a semiconductor substrate, reduction in thickness of the oxide layer allows a reflected signal of a laser beam to be a periodical signal and relative etching rate and completion of etching can be obtained by making use of the period of thin signal.

公开(公告)号：JPH09181138A

公开(公告)日：1997-07-11

申请号：JP23415796

申请日：1996-09-04

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JIYONHIYOBU BAEKU ,  BUN RII ,  JINHON RII ,  SUNUU CHIYOI

IPC: G01N21/17 ,  G01N21/31 ,  H01L21/205 ,  H01L21/66 ,  H01L33/30 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for detecting in real time doping characteristics, which grasps the change of doping concentration and growth speed insitu every moment and can precisely control growth variables. SOLUTION: A compound semiconductor substrate 130 is set in a growth chamber 100 of an epitaxial growth equipment, and a a compound semiconductor layer of double structure is grown by injecting reaction gas. The surface of the compound semiconductor substrate 130 in the growth chamber 100 is simultaneously scanned by using helium-neon laser light and diode laser light from a laser equipment 10. The respective reflected lights are detected by a photo detector 20. By analyzing the detection results with a computer 30, the change of the reflectivity of the reflected laser light and the change of the refractive index of an epitaxial layer are analyzed. Thereby the doping concentration and the growth speed of the growing compound semiconductor are analyzed in real time.