公开(公告)号：JPH09181020A

公开(公告)日：1997-07-11

申请号：JP16418196

申请日：1996-06-25

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JIYONHIYO BAEKU ,  BUN RII ,  SONUU CHIYOI ,  JINHON RII

IPC: H01L21/302 ,  G01B11/06 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a method of real-time detection of completion of removal of oxide layer existing on the surface of a semiconductor device by the thermal etching process. SOLUTION: In the method of real-time detection of completion of separation of an oxide layer of the present invention, when an oxide layer on the substrate surface having a difference of refraction coefficient from a semiconductor substrate, reduction in thickness of the oxide layer allows a reflected signal of a laser beam to be a periodical signal and relative etching rate and completion of etching can be obtained by making use of the period of thin signal.