公开(公告)号：AT504106T

公开(公告)日：2011-04-15

申请号：AT07122624

申请日：2007-12-07

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM GYUNGOCK ,  KIM IN GYOO ,  PYO JUNGHYUNG ,  CHANG KI SEOK

IPC: H01S5/34 ,  H01S5/343

Abstract: An interband resonant tunneling intersubband transition laser is disclosed, and includes a semiconductor substrate (120), and a first cladding layer (150b), an active region structure layer (110) and a second cladding layer (150a) formed on the semiconductor substrate. The active region structure layer includes quantum well layers (110a) and quantum barrier layers (110b) that are alternately stacked and have a broken energy bandgap. Thus, the interband resonant tunneling intersubband transition laser operates in a cascade mode in which an intersubband radiative transition and interband tunneling of carriers consecutively and repetitively occur in the active region structure layer, and thus can achieve a high output from a simple, compact structure.

公开(公告)号：DE602007013518D1

公开(公告)日：2011-05-12

申请号：DE602007013518

申请日：2007-12-07

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM GYUNGOCK ,  KIM IN GYOO ,  PYO JUNGHYUNG ,  CHANG KI SEOK

IPC: H01S5/34 ,  H01S5/343