中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5 records (took 0.103 seconds)

    1.
    发明专利
    未知

    公开(公告)号：AT511214T

    公开(公告)日：2011-06-15

    申请号：AT03258260

    申请日：2003-12-31

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： CHEONG WOO SEOK ,  JANG MOON GYU ,  LEE SEONG JAE

    IPC: H01L29/78 ,  H01L29/872 ,  H01L21/28 ,  H01L21/336 ,  H01L29/08 ,  H01L29/47 ,  H01L29/786 ,  H01L29/812

    Abstract: A schottky barrier transistor and a method of manufacturing the same are provided. The method includes forming a gate insulating layer and a gate on a substrate, forming a spacer on a sidewall of the gate, and growing a polycrystalline silicon layer and a monocrystalline silicon layer on the gate and the substrate, respectively, using a selective silicon growth. A metal is deposited on the polycrystalline silicon layer and the monocrystalline silicon layer. Then, the metal reacts with silicon of the polycrystalline silicon layer and the monocyrstalline silicon layer to form a self-aligned metal silicide layer. Therefore, selective wet etching for removing an unreacted metal after silicidation can be omitted. Furthermore, etching damage caused during the formation of the spacer can be decreased during the growth of the monocrystalline silicon layer, thereby improving the electrical characteristics of devices.

    2.
    发明专利
    未知

    公开(公告)号：DE602005017459D1

    公开(公告)日：2009-12-17

    申请号：DE602005017459

    申请日：2005-11-28

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： CHEONG WOO SEOK ,  YOO YONG GOO ,  RYU HO JUN ,  KIM EUN KYOUNG ,  PAEK MUN CHEOL

    IPC: G11B7/26 ,  G11B7/242

    Abstract: Provided is an apparatus and method of initializing a recording layer used in manufacturing a phase-change optical disk for storing information. The optical disk (200) is initialized using a UV lamp (110) in order to initialize the recording layer of the phase-change optical disk (200) capable of repeatedly writing information, without a separate optical head, whereby it is possible to increase productivity by remarkably reducing an initialization time of the optical disk since a large area is initialized using a UV beam. The recording layer may have a main component made of at least one selected from a group consisting of Ge, Sb, Te, In, Sn and Ga, and an additive made of at least one of Ag and Bi.

    3.
    发明专利
    未知

    公开(公告)号：AT447757T

    公开(公告)日：2009-11-15

    申请号：AT05111378

    申请日：2005-11-28

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： CHEONG WOO SEOK ,  YOO YONG GOO ,  RYU HO JUN ,  KIM EUN KYOUNG ,  PAEK MUN CHEOL

    IPC: G11B7/26 ,  G11B7/242

    Abstract: Provided is an apparatus and method of initializing a recording layer used in manufacturing a phase-change optical disk for storing information. The optical disk (200) is initialized using a UV lamp (110) in order to initialize the recording layer of the phase-change optical disk (200) capable of repeatedly writing information, without a separate optical head, whereby it is possible to increase productivity by remarkably reducing an initialization time of the optical disk since a large area is initialized using a UV beam. The recording layer may have a main component made of at least one selected from a group consisting of Ge, Sb, Te, In, Sn and Ga, and an additive made of at least one of Ag and Bi.

    Indium zinc oxide target and the preparing method thereof
    5.
    发明公开
    Indium zinc oxide target and the preparing method thereof 审中-公开
    氧化铅氧化锌靶及其制备方法

    公开(公告)号：KR20120066364A

    公开(公告)日：2012-06-22

    申请号：KR20100127666

    申请日：2010-12-14

    Applicant: KOREA ELECTRONICS TELECOMM ,  ADVANCED NANO PRODUCTS CO LTD

    Inventor： CHUNG SUNG MOOK ,  CHEONG WOO SEOK ,  HWANG CHI SUN ,  PARK SANG HEE ,  CHO KYOUNG IK ,  KIM SANG HUI ,  PARK CHANG WOO

    IPC: C23C14/08 ,  C23C14/34

    CPC classification number: C23C14/08 ,  C04B2235/3293 ,  C23C14/083 ,  C23C14/086

    Abstract: PURPOSE: An indium zinc oxide sputtering target and a method for manufacturing thereof are provided to obtain a sputtering target with a low resistance by employing titanium oxide as dopant. CONSTITUTION: An indium zinc oxide sputtering target comprises indium tin oxide, zinc oxide, and titanium oxide. The titanium oxide is TiO2-a employed as dopant instead of existing TiO2, where a is 0.5-1. The TiO2-a dopant improves the degree of freedom in the crystalline of a transparent film formed from the indium zinc oxide sputtering target, thereby enhancing the etching property of the transparent film.

    Abstract translation: 目的：提供一种铟锌氧化物溅射靶及其制造方法，通过使用氧化钛作为掺杂剂，获得具有低电阻的溅射靶。 构成：铟锌氧化物溅射靶包括氧化铟锡，氧化锌和氧化钛。 氧化钛是用作掺杂剂而不是现有TiO 2的TiO 2，其中a为0.5-1。 TiO 2 -a掺杂剂改善了由铟锌氧化物溅射靶形成的透明膜的结晶自由度，从而提高了透明膜的蚀刻性能。

Patent Agency Ranking