公开(公告)号：JP2003203556A

公开(公告)日：2003-07-18

申请号：JP2002156358

申请日：2002-05-29

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： AHN SEONG DEOK ,  LEE JIN HO ,  CHO KYOUNG IK

IPC: H01J1/30 ,  H01J1/304 ,  H01J9/02

Abstract: PROBLEM TO BE SOLVED: To reduce driving voltage, and to reduce electric power consumption by forming a hole of nanometer size in the first place in a manufacturing process of a semiconductor element, and increasing the aspect ratio of an emitter by forming the emitter in the hole. SOLUTION: This field emission element is composed of an emitter electrode 24 formed on a silicon substrate 21, an insulating layer 25 formed on the emitter electrode 24, a nanohole 27 formed in the nanosize in the insulating layer 25, and exposing the emitter electrode 24, a catalyst layer 28 formed on a bottom surface of the nanohole 27, the emitter 29 formed in the nanohole 27, and a gate electrode 26 formed on the insulating layer 25 around the emitter 29, and has an effect capable of reducing the driving voltage, and capable of reducing the electric power consumption by forming the hole 27 of nanometer size in a semiconductor manufacturing process, and increasing the aspect ratio of the emitter 29 by forming the emitter 29 in the nanohole 27. COPYRIGHT: (C)2003,JPO

公开(公告)号：EP2069861A4

公开(公告)日：2010-06-09

申请号：EP07808307

申请日：2007-09-18

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM CHUL AM ,  KANG SEUNG YOUL ,  MYOUNG HEY JIN ,  SUH KYUNG SOO ,  AHN SEONG DEOK ,  KIM GI HEON ,  YOU IN KYU ,  OH JI YOUNG

IPC: G02F1/167

CPC classification number: G02F1/167 ,  G02F1/1303

公开(公告)号：KR100777110B1

公开(公告)日：2007-11-19

申请号：KR20060062870

申请日：2006-07-05

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KANG SEUNG YOUL ,  AHN SEONG DEOK ,  PARK SANG HEE ,  HWANG CHI SUN ,  YOU IN KYU ,  KIM CHUL AM ,  KIM GI HEON ,  BAEK KYU HA ,  OH JI YOUNG ,  SUH KYUNG SOO

IPC: H01L29/786

CPC classification number: H01L51/107 ,  H01L51/0545

Abstract: A flexible organic thin-film transistor and a manufacturing method thereof are provided to stabilize performance of a final element by maintaining reproducibility and stability in an etch process. A gate electrode(12) is positioned on an upper surface of a substrate(10). An organic semiconductor thin film(16) is formed on both sides of an organic insulating layer in order to face the gate electrode. A source/drain electrode(14) is positioned on the organic insulating layer and is connected to the organic semiconductor thin film. An etch-stop layer(15) is formed to cover the organic insulating layer. The etch-stop layer is formed with an inorganic layer. The inorganic layer is formed with one of an aluminum oxide layer, a silicon oxide layer, and a silicon nitride layer.

Abstract translation: 提供了一种柔性的有机薄膜晶体管及其制造方法，以通过在蚀刻工艺中保持再现性和稳定性来稳定最终元件的性能。 栅电极（12）位于衬底（10）的上表面上。 有机半导体薄膜（16）形成在有机绝缘层的两侧以面对栅电极。 源极/漏极（14）位于有机绝缘层上并与有机半导体薄膜连接。 形成蚀刻停止层（15）以覆盖有机绝缘层。 蚀刻停止层由无机层形成。 无机层由氧化铝层，氧化硅层和氮化硅层中的一个形成。