公开(公告)号：JP2003142420A

公开(公告)日：2003-05-16

申请号：JP2002195126

申请日：2002-07-03

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LEE SEONG-JAE ,  CHO WON-JU ,  PARK KYOUNG WAN

IPC: H01L21/265 ,  H01L21/22 ,  H01L21/225 ,  H01L21/3115 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an integrated circuit equipped with a shallow junction. SOLUTION: A diffusion preventing film pattern 12 is formed on a semiconductor substrate 10, an SOG film doped with impurities is formed on the semiconductor substrate 10, and impurity ions are additionally implanted into the SOG film by a plasma ion implantation method to increase the SOG film in impurity concentration. Then, the impurities are diffused into the semiconductor substrate by rapid heat treatment by a solid-state diffusion method for the formation of a shallow junction. In this case, impurity concentration is precisely controlled by a plasma ion implantation method, but impurity ions are not implanted directly into the semiconductor substrate, so that the crystalline structure of the substrate is not damaged. Furthermore, if this method is applied after a gate electrode is formed, an LDD region and a source/drain extended region are formed in a self-aligned manner.

公开(公告)号：JP2003163224A

公开(公告)日：2003-06-06

申请号：JP2002191424

申请日：2002-06-28

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LEE SEONG-JAE ,  CHO WON-JU ,  PARK KYOUNG WAN

IPC: H01L21/8234 ,  H01L21/225 ,  H01L21/265 ,  H01L21/334 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a MOS transistor having shallow source/drain junction regions. SOLUTION: A diffusion source film is formed on a semiconductor substrate 10 where gate patterns 18 are formed and then the same type or different type of impurities are implanted into the diffusion source film several times at different implant angles. As a result, the impurity concentration of the diffusion source film can be nonuniformly controlled so that damage to the crystal structure of the semiconductor substrate 10 does not occur and thus dislocation does not occur. Further, impurities contained in the diffusion source film having a nonuniform impurity concentration are diffused into the semiconductor substrate 10 by a solid phase diffusion method. Thus, the shallow source/drain junction regions composed of LDD regions and highly doped source/drain regions are formed by a self-alignment method. COPYRIGHT: (C)2003,JPO

公开(公告)号：AU2002359079A1

公开(公告)日：2004-03-29

申请号：AU2002359079

申请日：2002-12-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： CHEONG WOO-SEOK ,  LEE SEONG-JAE ,  CHO WON-JU ,  JANG MOON-GYU

IPC: H01L21/285 ,  H01L21/00 ,  H01L21/02 ,  H01L21/28 ,  H01L21/336 ,  H01L21/338 ,  H01L29/417 ,  H01L29/786

Abstract: A deposition apparatus comprises: first chamber having first substrate holder, halogen lamp, and substrate door; second chamber having temperature-adjustable second substrate holder, middle film, elevating portion, and metal deposition portion; pumping portions connected to first and second chambers; gas injecting portions; and connecting portion. Deposition apparatus comprises: first chamber having first substrate holder provided in the lower portion of the first chamber for mounting sample, halogen lamp provided in the upper portion of the first chamber for irradiating lamp light to the sample, and substrate door where sample passes; second chamber having temperature-adjustable second substrate holder provided in the lower portion of the second chamber for mounting the sample, middle film provided in the middle portion of the second chamber for dividing the chamber into upper and lower portions, elevating portion attached to second substrate holder for moving the second substrate holder into upper or lower portion on the basis of the middle film, and metal deposition portion provided in the upper portion of the second chamber; pumping portions connected to first and second chambers for adjusting the pressures; gas injecting portions connected to first and second chambers for injecting gas at a certain amount; and connecting portion for allowing the sample to reciprocally move between first and second chambers. The connecting portion includes a gate valve. An independent claim is also included for a method of manufacturing semiconductor device using the deposition apparatus comprising: cleaning a substrate where semiconductor structure is formed using first chamber; moving the substrate into second chamber after cleaning the substrate; and depositing a metal film (10).

公开(公告)号：DE10297788B4

公开(公告)日：2008-06-26

申请号：DE10297788

申请日：2002-12-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： CHEONG WOO-SEOK ,  LEE SEONG-JAE ,  CHO WON-JU ,  JANG MOON-GYU

IPC: H01L21/285 ,  H01J37/34 ,  H01L21/00 ,  H01L21/02 ,  H01L21/203 ,  H01L21/28 ,  H01L21/336 ,  H01L21/338 ,  H01L29/417 ,  H01L29/786

Abstract: A deposition apparatus comprises: first chamber having first substrate holder, halogen lamp, and substrate door; second chamber having temperature-adjustable second substrate holder, middle film, elevating portion, and metal deposition portion; pumping portions connected to first and second chambers; gas injecting portions; and connecting portion. Deposition apparatus comprises: first chamber having first substrate holder provided in the lower portion of the first chamber for mounting sample, halogen lamp provided in the upper portion of the first chamber for irradiating lamp light to the sample, and substrate door where sample passes; second chamber having temperature-adjustable second substrate holder provided in the lower portion of the second chamber for mounting the sample, middle film provided in the middle portion of the second chamber for dividing the chamber into upper and lower portions, elevating portion attached to second substrate holder for moving the second substrate holder into upper or lower portion on the basis of the middle film, and metal deposition portion provided in the upper portion of the second chamber; pumping portions connected to first and second chambers for adjusting the pressures; gas injecting portions connected to first and second chambers for injecting gas at a certain amount; and connecting portion for allowing the sample to reciprocally move between first and second chambers. The connecting portion includes a gate valve. An independent claim is also included for a method of manufacturing semiconductor device using the deposition apparatus comprising: cleaning a substrate where semiconductor structure is formed using first chamber; moving the substrate into second chamber after cleaning the substrate; and depositing a metal film (10).

公开(公告)号：DE10297788T5

公开(公告)日：2005-08-18

申请号：DE10297788

申请日：2002-12-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： CHEONG WOO-SEOK ,  LEE SEONG-JAE ,  CHO WON-JU ,  JANG MOON-GYU

IPC: H01L21/285 ,  H01L21/00 ,  H01L21/02 ,  H01L21/28 ,  H01L21/336 ,  H01L21/338 ,  H01L29/417 ,  H01L29/786

Abstract: A deposition apparatus comprises: first chamber having first substrate holder, halogen lamp, and substrate door; second chamber having temperature-adjustable second substrate holder, middle film, elevating portion, and metal deposition portion; pumping portions connected to first and second chambers; gas injecting portions; and connecting portion. Deposition apparatus comprises: first chamber having first substrate holder provided in the lower portion of the first chamber for mounting sample, halogen lamp provided in the upper portion of the first chamber for irradiating lamp light to the sample, and substrate door where sample passes; second chamber having temperature-adjustable second substrate holder provided in the lower portion of the second chamber for mounting the sample, middle film provided in the middle portion of the second chamber for dividing the chamber into upper and lower portions, elevating portion attached to second substrate holder for moving the second substrate holder into upper or lower portion on the basis of the middle film, and metal deposition portion provided in the upper portion of the second chamber; pumping portions connected to first and second chambers for adjusting the pressures; gas injecting portions connected to first and second chambers for injecting gas at a certain amount; and connecting portion for allowing the sample to reciprocally move between first and second chambers. The connecting portion includes a gate valve. An independent claim is also included for a method of manufacturing semiconductor device using the deposition apparatus comprising: cleaning a substrate where semiconductor structure is formed using first chamber; moving the substrate into second chamber after cleaning the substrate; and depositing a metal film (10).